Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently …
Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
Methane hydrate is an icelike substance that is stable at high pressure and low temperature in continental margin sediments. Since the discovery of a large number of gas flares at the …
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs nanowires, that depends on only a few a priori unknown physical parameters. The model is …
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing …
AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh… - Nano …, 2014 - ACS Publications
We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …
Nanowire growth has generally relied on an initial particle of a catalyst such as Au to define the wire diameter and stabilize the growth. Self-catalyzed growth of III–V nanowires avoids …
III–V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could …