We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs
nanowires on Si (111) substrates in the temperature range from 550° C down to 450° C. This …

The epitaxial growth of antimonide-based nanowires has become an attractive subject due
to their interesting properties required for various applications such as long-wavelength IR …

We report on a new mechanism of nanowire formation: during Au deposition on Si (110)
substrates, Au–Si droplets grow, move spontaneously, and fabricate a Si nanowire behind …

We study theoretically the nucleation and development of sequences of monolayers during
the vapor-liquid-solid growth of semiconductor nanowires, in the case where all material …

III-V nanowire (NW) heterostructures are promising candidates for advanced silicon-
integrated optoelectronics and quantum light sources. The interfacial abruptness in axial NW …

GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy
using self-assisted growth. Selective-area growth was achieved using a patterned oxide …

Ternary III–V alloys of tunable bandgap are a foundation for engineering advanced
optoelectronic devices based on quantum-confined structures including quantum wells …

Any device exposed to ambient conditions will be prone to oxidation. This may be of
particular importance for semiconductor nanowires because of the high surface-to-volume …

Density functional theory calculations within both the local density approximation and the
generalized gradient approximation are used to study Au-catalyzed growth under near …

Self‐catalyzed GaAs nanowire (NW) growth via the vapor–liquid–solid mechanism is
investigated by a theoretical model including the kinetics of material transport inside the …