In this work we show that the incidence angle of group-III element fluxes plays a significant
role in the diffusion-controlled growth of III–V nanowires (NWs) by molecular beam epitaxy …

Patterned arrays of gold-assisted vapor–liquid–solid (VLS) nanowires (NWs) were grown on
Si (111) substrates by gas source molecular beam epitaxy (MBE). GaAs/GaP …

The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial
(MBE) growth of III–V semiconductors is overviewed along with backgrounds of the …

Guided growth of semiconductor nanowires in nanotube templates has been considered as
a potential platform for reproducible integration of III–Vs on silicon or other mismatched …

Raman scattering is a powerful inelastic light scattering technique able to probe the
vibrational properties of materials. This technique has been successfully employed in …

Straight, axial InAs nanowire with multiple segments of Ga x In 1− x As was grown. High
resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of …

Autocalytic growth of GaAs and GaP semiconductor nanowires is frequently carried out
using SiO x/Si (111) substrates with lithographically prepared hole arrays, on which Ga …

The integration of III–V semiconductors with Si in device fabrication is facilitated by the use
of nanoscale structures such as nanowires. Nanowires are predominantly grown using Au …

The statistics of nucleation events in nanowires growing via the vapor–liquid–solid
mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is …

We study the role of gold droplets in the initial stage of nanowire growth via the vapor–liquid–
solid method. Apart from serving as a collections center for growth species, the gold droplets …