Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies
J Wang, Y Xiong, L Ye, W Li, G Qin, H Ruan, H Zhang… - Optical Materials, 2021 - Elsevier
Abstract Gallium oxide (Ga 2 O 3) is a natural candidate material for next-generation solar-
blind photodetectors (PDs). At present, it remains challenging to tune a balanced …
blind photodetectors (PDs). At present, it remains challenging to tune a balanced …
Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition
M Heikkinen, R Ghiyasi… - Advanced Materials …, 2024 - Wiley Online Library
Atomic layer deposition (ALD) technology is one of the cornerstones of the modern
microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic …
microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic …
Effect of substrate temperature on the properties of spray deposited Ga2O3 thin films, for solar blind UV detector applications
In this work, Ga 2 O 3 thin films were deposited on glass substrates by chemical spray
pyrolysis technique at three different substrate temperatures 350° C, 400° C, and 450° C …
pyrolysis technique at three different substrate temperatures 350° C, 400° C, and 450° C …
Current state of Ga 2 O 3-based electronic and optoelectronic devices. Brief review
AA Petrenko, YN Kovach, DA Bauman… - Rev. Adv. Mater …, 2021 - elibrary.ru
In this review, we consider the main gallium oxide areas of application in electronics and
optoelectronics with focus on power electronics devices (rectifiers, field effect transistors) …
optoelectronics with focus on power electronics devices (rectifiers, field effect transistors) …
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
D Spassov, A Paskaleva, E Guziewicz, V Davidović… - Materials, 2021 - mdpi.com
High-k dielectric stacks are regarded as a promising information storage media in the
Charge Trapping Non-Volatile Memories, which are the most viable alternative to the …
Charge Trapping Non-Volatile Memories, which are the most viable alternative to the …
The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …
memory device by RF magnetron sputtering technique. The structural and electrical …
Investigation of Annealing Temperature and Gamma Irradiation on HfO2/Dy2O3/Al2O3/n-Si (100) Memory Capacitor
The effect of annealing temperature and gamma irradiation on Al/HfO 2/Dy 2 O 3/Al 2 O 3/n-
Si (100) tri-layer capacitors have been studied intensively. The HfO 2/Dy 2 O 3/Al 2 O 3 were …
Si (100) tri-layer capacitors have been studied intensively. The HfO 2/Dy 2 O 3/Al 2 O 3 were …
Transport-property tailored thin films for thermoelectrics through atomic/molecular layer deposition
R Ghiyasi - 2023 - aaltodoc.aalto.fi
Atomic layer deposition (ALD) creates a unique opportunity for effective materials
nanostructuring. In this thesis, ALD, along with its other form, molecular layer deposition …
nanostructuring. In this thesis, ALD, along with its other form, molecular layer deposition …
High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack
W Xiong, JY Huo, XH Wu, WJ Liu, DW Zhang… - Chinese …, 2023 - iopscience.iop.org
Abstract Amorphous In–Ga–Zn–O (a-IGZO) thin-film transistor (TFT) memories with novel p-
SnO/n-SnO 2 heterojunction charge trapping stacks (CTSs) are investigated comparatively …
SnO/n-SnO 2 heterojunction charge trapping stacks (CTSs) are investigated comparatively …
[PDF][PDF] Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. Materials 2021, 14, 849
D Spassov, A Paskaleva, E Guziewicz, V Davidović… - 2021 - researchgate.net
High-k dielectric stacks are regarded as a promising information storage media in the
Charge Trapping Non-Volatile Memories, which are the most viable alternative to the …
Charge Trapping Non-Volatile Memories, which are the most viable alternative to the …