InP/InGaAsP thin films based solar cells: Lattice mismatch impact on efficiency
In this study, the optical proprieties and the performance of based indium gallium arsenide
phosphide (InGaAsP) quaternary solar cells were investigated, the absorption and the …
phosphide (InGaAsP) quaternary solar cells were investigated, the absorption and the …
Predicting the bandgap energy of distorted GaSbxAs1-x and InSbxAs1-x using design of experiment (DoE) and artificial intelligence (AI): a comparative study
The band anticrossing (BAC) theory is widely used to model the bandgap energy of GaSb x
As 1-x and InSb x As 1-x materials and is based on two effects: impurity-host interaction in …
As 1-x and InSb x As 1-x materials and is based on two effects: impurity-host interaction in …
Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-NV alloys using artificial neural networks
The physical properties of the low bandgap III-VN-Sb semiconductor elaborated on a GaAs
substrate were modeled. The effect of deformation owing to lattice mismatch was …
substrate were modeled. The effect of deformation owing to lattice mismatch was …
[HTML][HTML] Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks
Appraising the bandgap energy of materials is a major issue in the field of band
engineering. To better understand the behavior of GaAs 1-u N u material, it is necessary to …
engineering. To better understand the behavior of GaAs 1-u N u material, it is necessary to …
Prediction of mechanical properties of In1-x GaxAsyP1-y lattice-matched to different substrates using artificial neural network (ANN)
The mechanical properties, namely the elastic constants (C11, C12, and C44), bulk B, shear
Cs, and Young's modulus Y0, of the In1-xGaxAsyP1-y lattice-matched GaAs and InP …
Cs, and Young's modulus Y0, of the In1-xGaxAsyP1-y lattice-matched GaAs and InP …
Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates
Improving transport phenomena and increasing the absorption of III-V materials is a major
research topic. These properties are affected by several factors. Understanding the link …
research topic. These properties are affected by several factors. Understanding the link …
Deformed ternary phosphides III-P for efficient light control in optoelectronic applications
In this study, we simulated the response of ternary phosphide materials subjected to a strain
due to the lattice mismatch; the study was made by varying the concentration of phosphorus …
due to the lattice mismatch; the study was made by varying the concentration of phosphorus …
Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling
In this study, we investigated the optoelectronic behavior of In1− x Ga x As alloy epitaxy on a
GaAs substrate by varying the chemical composition of gallium. We studied the impact of the …
GaAs substrate by varying the chemical composition of gallium. We studied the impact of the …
[HTML][HTML] Towards estimating the thermal properties of carbon allotropes and their derivatives: Hybridization between the artificial neural network method and the …
Carbon allotropes and their derivatives have attracted the interest of many researchers
owing to their ability to conduct heat. In this study, a multi-layer perception network (MLP) …
owing to their ability to conduct heat. In this study, a multi-layer perception network (MLP) …
Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate
The objective of this work is to simulate and optimize the physical properties of the
quaternary semiconductor InGaAsP deposited on InP substrate, in order to enhance the …
quaternary semiconductor InGaAsP deposited on InP substrate, in order to enhance the …