Performance optimization of AlGaAs/GaAsBiN resonant tunneling diode
The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
[HTML][HTML] Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence
S Hasegawa, N Hasuike, K Kanegae… - Materials Science in …, 2023 - Elsevier
GaAsBi alloys are potential candidates for near-infrared optoelectronic applications, such as
light-emitting diodes, laser diodes, avalanche photodiodes, and solar cells. In this paper …
light-emitting diodes, laser diodes, avalanche photodiodes, and solar cells. In this paper …
High precision parabolic quantum wells grown using pulsed analog alloy grading technique: Photoluminescence probing and fractional-dimensional space approach
M Karaliūnas, E Dudutienė, A Čerškus, J Pagalys… - Journal of …, 2021 - Elsevier
Abstract The designed GaAs/AlGaAs parabolic quantum well (PQW) was grown using a
pulsed analog alloy grading (PAAG) technique with molecular beam epitaxy by setting a …
pulsed analog alloy grading (PAAG) technique with molecular beam epitaxy by setting a …
MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure
In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
Fibonacci hyperbolic quantum wells: a model for two-level non-linear optical response
F Barreto-Basave, ME Mora-Ramos, F Ungan… - Optical and Quantum …, 2023 - Springer
A Fibonacci hyperbolic model for the confining potential profile of finite-depth semiconductor
quantum wells is proposed. Spatial dependence of electron effective mass is explicitly taken …
quantum wells is proposed. Spatial dependence of electron effective mass is explicitly taken …
[HTML][HTML] Detection of BiGa hetero-antisites at Ga (As, Bi)/(Al, Ga) As interfaces
In this work, we show how diffraction-based chemically sensitive dark-field transmission
electron microscopy (DFTEM) reveals the presence of Bi hetero-antisites (Bi Ga) at the …
electron microscopy (DFTEM) reveals the presence of Bi hetero-antisites (Bi Ga) at the …
Depopulation mechanism for incoherent terahertz source–THz torch–based on GaAsBi/GaAs quantum well in GaAs/AlGaAs parabolic quantum well
Parabolic quantum wells (PQWs) are known as a promising candidate for a compact
terahertz (THz) source. PQWs have equidistant subbands that can be designed to be …
terahertz (THz) source. PQWs have equidistant subbands that can be designed to be …
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
This paper reports on laser excitation power dependent photoluminescence (PL) studies on
epitaxial GaAs1− x Bi x (2.3%< x< 10.4%) layers with thicknesses of 30–40 nm which are …
epitaxial GaAs1− x Bi x (2.3%< x< 10.4%) layers with thicknesses of 30–40 nm which are …
Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode
We studied the electroluminescence (EL) properties of an optically pumped GaAsBi–GaAs
heterojunction p–i–n diode. GaAsBi–GaAs quantum well excitonic transitions dominate the …
heterojunction p–i–n diode. GaAsBi–GaAs quantum well excitonic transitions dominate the …
Electric field effect on the intersubband optical absorption of GeSn quantum wells with parabolically graded barriers
In this study, we propose a theoretical simulation of a Ge 0.9 Sn 0.1 rectangular SQW with
GeSn parabolically graded barriers (PGBs) in the terahertz (THz) region. The discrete intra …
GeSn parabolically graded barriers (PGBs) in the terahertz (THz) region. The discrete intra …