The development of integrated circuits based on two-dimensional materials

K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung… - Nature …, 2021 - nature.com
Abstract Two-dimensional (2D) materials could potentially be used to develop advanced
monolithic integrated circuits. However, despite impressive demonstrations of single devices …

Semiconductor quantum dots for memories and neuromorphic computing systems

Z Lv, Y Wang, J Chen, J Wang, Y Zhou… - Chemical reviews, 2020 - ACS Publications
The continued growth in the demand of data storage and processing has spurred the
development of high-performance storage technologies and brain-inspired neuromorphic …

Thousands of conductance levels in memristors integrated on CMOS

M Rao, H Tang, J Wu, W Song, M Zhang, W Yin… - Nature, 2023 - nature.com
Neural networks based on memristive devices,–have the ability to improve throughput and
energy efficiency for machine learning, and artificial intelligence, especially in edge …

Emergent ferroelectricity in subnanometer binary oxide films on silicon

SS Cheema, N Shanker, SL Hsu, Y Rho, CH Hsu… - Science, 2022 - science.org
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan… - Nature …, 2020 - nature.com
Two-dimensional materials could play an important role in beyond-CMOS (complementary
metal–oxide–semiconductor) electronics, and the development of memristors for information …

Memristor-based biomimetic compound eye for real-time collision detection

Y Wang, Y Gong, S Huang, X Xing, Z Lv… - Nature …, 2021 - nature.com
The lobula giant movement detector (LGMD) is the movement-sensitive, wide-field visual
neuron positioned in the third visual neuropile of lobula. LGMD neuron can anticipate …

Roadmap on emerging hardware and technology for machine learning

K Berggren, Q Xia, KK Likharev, DB Strukov… - …, 2020 - iopscience.iop.org
Recent progress in artificial intelligence is largely attributed to the rapid development of
machine learning, especially in the algorithm and neural network models. However, it is the …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

In situ Nafion-nanofilm oriented (002) Zn electrodeposition for long-term zinc-ion batteries

D Zhang, Z Song, L Miao, Y Lv, L Gan, M Liu - Chemical Science, 2024 - pubs.rsc.org
Dendrite growth and parasitic reactions of a Zn metal anode in aqueous media hinder the
development of up-and-coming Zn-ion batteries. Optimizing the crystal growth after Zn …

Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution

F Zhang, Y Zhang, L Li, X Mou, H Peng, S Shen… - Nature …, 2023 - nature.com
Multistate resistive switching device emerges as a promising electronic unit for energy-
efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic …