A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

A Sachdeva, D Kumar, E Abbasian - AEU-International Journal of …, 2023 - Elsevier
Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

A cntfet based bit-line powered stable sram design for low power applications

A Sachdeva, L Gupta, K Sharma… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Higher charge mobility, gate control, and better electrostatics are the key reasons that make
carbon nanotube field effect transistor (CNTFET) a better candidate to become the …

Design of a stable single sided 11t static random access memory cell with improved critical charge

A Sachdeva - International Journal of Numerical Modelling …, 2023 - Wiley Online Library
Radiation‐induced soft errors are becoming a key challenge in satellite‐based
communication. The worst‐hit component of such devices is static random‐access memory …

Design of a soft error hardened SRAM cell with improved access time for embedded systems

VK Tomar, A Sachdeva - Microprocessors and Microsystems, 2022 - Elsevier
Recent advancements in high-performance processor operation have nurtured the
requirement of low power, reliable, and fast static random-access memory (SRAM). Scaling …

Low power static random-access memory cell design for mobile opportunistic networks sensor nodes

A Sachdeva - Journal of Circuits, Systems and Computers, 2023 - World Scientific
In the present scenario, the devices supporting neighbor discovery are going through the
renovation phase, and crossing the classical barrier such as the trade-off between power …

Gui testing android application

H Singh, SK Jha, D Gupta… - 2022 10th International …, 2022 - ieeexplore.ieee.org
With the turn of events and promotion of versatile Internet, cell phones are turning out to be
increasingly well known. Android is perhaps the most well known groundwork of mobile …

Construction Technique and Evaluation of High Performance -bit Burst Error Correcting Codes for Protecting MCUs

RK Maity, J Samanta, J Bhaumik - Journal of Circuits, Systems and …, 2023 - World Scientific
The occurrences of Multiple Cell Upset (MCU) are more liable to arise in modern memory
systems with the continuous upgradation of microelectronics technology from micron to deep …

Optimization of the aspect ratio to enhance the power and noise-margin of a standard 6T (S6T)-SRAM cell

S Bhavani, L Gupta, A Sachdeva… - … on Emerging Research …, 2022 - ieeexplore.ieee.org
The demand for low-power, dependable and efficient static random-access memory (SRAM)
design has risen as a result of the continuous progress in computational power reduction …

6T SRAM Cell Design Using CMOS at Different Technology nodes

D Mittal - 2022 IEEE 3rd Global Conference for Advancement in …, 2022 - ieeexplore.ieee.org
SRAM (Static Random Access Memory) has become a major key component in many VLSI
Chips, due to its high storage density and quick access time, it has become a popular data …

Data Sharing Enabled Through Internet of Things (IoT) in Wireless Communication Networks

A Shukla, S Pundir, AK Rao, N Shalini… - … and Informatics (IC3I …, 2023 - ieeexplore.ieee.org
A variety of difficulties while attempting to transmit a file including multimedia data through
the many peers of a wireless IoT network. The system's centralization, which increases the …