Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

Bismuth (Bi), discovered in 1753, is the heaviest non-radioactive element in the periodic
table. The interest in using Bi in solid-state devices in early days was mainly focused on …

Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …

The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …

The epitaxial growth, structural, and optical properties of GaSb 1–x Bi x alloys have been
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …