Structure, optical, and room-temperature ferromagnetic properties of pure and transition-metal-(Cr, Mn, and Ni)-doped ZnO nanocrystalline films grown by the sol− gel …
WW Li, WL Yu, YJ Jiang, CB Jing, JY Zhu… - The Journal of …, 2010 - ACS Publications
Transition-metal-(Cr, Mn, and Ni)-doped zinc oxide (ZnO) with the concentration of 2.5% and
pure ZnO nanocrystalline (nc) films have been fabricated on quartz substrates by the sol …
pure ZnO nanocrystalline (nc) films have been fabricated on quartz substrates by the sol …
Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons
S Nakashima, H Harima - Journal of applied physics, 2004 - pubs.aip.org
Raman and infrared reflection spectroscopies provide us information on electronic
properties in polar semiconductors. In the present work, we have employed a dielectric …
properties in polar semiconductors. In the present work, we have employed a dielectric …
Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
S Nakashima, T Kitamura, T Kato, K Kojima… - Applied Physics …, 2008 - pubs.aip.org
The free carrier concentration of n-4 H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …
Raman scattering by LO phonon-plasmon coupled modes in n-type
We have studied by means of Raman scattering the LO phonon-plasmon coupled modes in
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers
We have studied the longitudinal-optical (LO)-phonon–plasmon coupled modes in high-
mobility InN layers with free-electron densities ranging from 2.3× 10 18 to 1.6× 10 19 cm− 3 …
mobility InN layers with free-electron densities ranging from 2.3× 10 18 to 1.6× 10 19 cm− 3 …
Epitaxial growth of high In-content In0. 41Ga0. 59N/GaN heterostructure on (11–20) Al2O3 substrate
Growth characteristics of high Indium content InGaN/GaN heterostructure on a-plane (11 2¯
0) sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in …
0) sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in …
High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy
We present an experimental and theoretical lattice-dynamical study of InN at high
hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers …
hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers …
Group-V intermixing in InAs∕ InP quantum dots
CK Chia, SJ Chua, S Tripathy, JR Dong - Applied Physics Letters, 2005 - pubs.aip.org
Postgrowth intermixing in In As∕ In P quantum dot (QD) structures have been investigated
by rapid thermal annealing and laser irradiation techniques. In both cases, room …
by rapid thermal annealing and laser irradiation techniques. In both cases, room …
Temperature and doping dependence of the Raman scattering in 4H-SiC
Y Peng, X Hu, X Xu, X Chen, J Peng, J Han… - Optical Materials …, 2016 - opg.optica.org
Raman scattering spectra of 4H-SiC with different carrier concentrations were measured
from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty …
from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty …
GaSb band-structure models for electron density determinations from Raman measurements
MA Ochoa, JE Maslar, HS Bennett - Journal of applied physics, 2023 - pubs.aip.org
We investigate the use of Raman spectroscopy to measure carrier concentrations in n-type
GaSb epilayers to aid in the development of this technique for the nondestructive …
GaSb epilayers to aid in the development of this technique for the nondestructive …