One of the solutions enabling performance progress, which can overcome the downsizing
limit in silicon technology, is the integration of different functional optoelectronic devices …

We report on the characterization of two-dimensionally confined phonon-polaritons at
terahertz frequencies in suspended waveguides using Raman scattering. The cross …

Phonon-plasmon coupled mode Raman spectra of p-type GaSb were measured at room
temperature as a function of hole concentration. These spectra were obtained using an …

We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled
modes (LOPCMs) in a series of heavily Se-doped, n-type GaAs 1− x N x epilayers with x< …

Structural modifications in InP (111) due to 1.5 MeV implantation of Sb have been
characterized using first-order and second-order Raman spectroscopy. With both …

We demonstrate quantitatively how values of electron densities in GaAs extracted from
Raman spectra of two samples depend on models used to describe electric susceptibility …

In this letter, we report fabrication of ordered InP nanostructures using 50 keV Ar+-ion
irradiation at normal incidence. The structural and optical properties of these nanodots as a …

Photoluminescence, Raman spectroscopy and X-ray photoelectron spectroscopy are used
to study electronic and atomic structure of n-InP (100) surfaces treated with different sulfide …

Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room
temperature as a function of electron concentration. These spectra were obtained using an …

The integration of III–V compound semiconductors in Si is a crucial step towards faster and
smaller devices in future technologies. In this work, we investigate the formation process of …