Raman scattering by LO-phonon–plasmon coupled modes in : Role of Landau damping
R Cuscó, E Alarcón-Lladó, L Artús, WS Hurst… - Physical Review B …, 2010 - APS
We present a detailed investigation of the phonons and longitudinal-optical-phonon–
plasmon coupled modes in the Ga 1− x In x As y Sb 1− y alloy by means of Raman …
plasmon coupled modes in the Ga 1− x In x As y Sb 1− y alloy by means of Raman …
Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs
R Cuscó, N Domènech-Amador, PY Hung… - Journal of Alloys and …, 2015 - Elsevier
We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-type In
0.53 Ga 0.47 As with hole densities ranging from 2.2× 10 17 to 2.4× 10 19 cm− 3. Two …
0.53 Ga 0.47 As with hole densities ranging from 2.2× 10 17 to 2.4× 10 19 cm− 3. Two …
Raman spectroscopic study of the electrical properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport method
Y Peng, X Xu, X Hu, K Jiang, S Song, Y Gao… - Journal of Applied …, 2010 - pubs.aip.org
Raman spectroscopy has been used to determine the carrier concentration of 6H–SiC
crystal so as to understand the effects of hydrogen on the electrical property of 6H–SiC …
crystal so as to understand the effects of hydrogen on the electrical property of 6H–SiC …
Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
AJE N'dohi, C Sonneville, S Saidi, TH Ngo, P De Mierry… - Crystals, 2023 - mdpi.com
In this work, the physical and the electrical properties of vertical GaN Schottky diodes were
investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current …
investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current …
Optical phonon behavior in strain-free dilute Ga (As, N) studied by Raman scattering
We present a Raman-scattering study on strain-free dilute Ga (As, N) epilayers grown by
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE)
technique have been studied using infrared (IR) and Raman scattering spectroscopy at …
technique have been studied using infrared (IR) and Raman scattering spectroscopy at …
Analysis of InGaAs/InP pIn Photodiode Failed by Electrostatic Discharge
Y Ito, R Yokogawa, O Ueda, N Sawamoto, K Ide… - Journal of Electronic …, 2023 - Springer
Abstract We have evaluated InGaAs/InP PIN (pIn) photodiodes failed by electrostatic
discharge (ESD) with forward or reverse biasing, using scanning electron microscopy …
discharge (ESD) with forward or reverse biasing, using scanning electron microscopy …
Bismuth-content-dependent polarized Raman spectrum of InPBi alloy
We systematically investigate the optical properties of the InP 1− x Bi x ternary alloys with
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …
Исследования полупроводников с дефектами методом комбинационного (рамановского) рассеяния света
ЛА Фальковский - Успехи физических наук, 2004 - ufn.ru
Как известно, основные успехи в экспериментальном изучении фононных спектров
достигнуты много лет назад с помощью тепловых нейтронов. Однако в последнее …
достигнуты много лет назад с помощью тепловых нейтронов. Однако в последнее …
Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions
MV Lebedev, TV Lvova, AN Smirnov, VY Davydov - Semiconductors, 2021 - Springer
The electronic properties of n-InP (100) surfaces passivated with various sulfide solutions
are studied using photoluminescence and Raman spectroscopy. It is shown that the …
are studied using photoluminescence and Raman spectroscopy. It is shown that the …