The electron effective masses in n-type modulation doped Ga 0.7 In 0.3 N y As 1− y/GaAs
quantum wells with nitrogen mole fractions of y= 0.004 and 0.010 were investigated …

We have carried out a systematic evaluation of the accuracy of the charge density values
obtained by fitting a modified hydrodynamical model to Raman spectra. The hydrodynamical …

Phonon-plasmon coupled mode Raman spectra of n-type GaInAsSb were measured at
room temperature as a function of electron concentration. A relatively simple spectral model …

β-Gallium oxide (Ga 2 O 3⁠) is an extensively investigated ultrawide-bandgap
semiconductor for potential applications in power electronics and radio frequency switching …

Catalyst-free self-assembled InP nanoneedles are grown on (001) InP-substrates using gas-
source molecular beam epitaxy. The nanoneedles are investigated using SEM and TEM …

We have investigated coherent LO phonon properties in zinc-based II–VI widegap
semiconductors, focusing on phonon-plasma coupled modes. By a careful treatment of the …

The theory of Raman scattering by the coupled electron-phonon system in metals and
heavily doped semiconductors is developed with Coulomb screening and the electron …

The subwavelength confinement and enhanced electric field created by plasmons allow
precise sensing and enhanced light–matter interaction. However, the high frequency and …

We perform visible and ultraviolet (UV) Raman-scattering experiments to study a series of
undoped and Mn-doped c-GaN thin films grown by plasma-assisted molecular beam epitaxy …

The results of investigations of the structural and electrical properties of a homoepitaxial
nanoscale (001) n-GaP layer of 70 nm in thickness grown by metalorganic vapor phase …