The Smart CutTM process offers an advantageous opportunity to provide a large number of
performance-improved SiC substrates for power electronics. The crystalline quality and the …

Abstract β-Gallium Oxide (Ga2O3) is an extensively investigated ultrawide-bandgap
semiconductor for potential applications in power electronics and RF switching. The room …

For zinc blende semiconductors, such as InP, the Raman selection rules for a backscattering
configuration from the (001) surface forbid the transversal optical (TO) phonon mode …

Raman spectroscopy has become a widely used characterization tool in today's
semiconductor research. In this chapter, we provide an introductory background to the …

The doping-induced metal-insulator transition (MIT) and superconductivity has been studied
in highly boron-doped single crystal diamond (structural properties, scaling law approach for …

The majority electron density as a function of the Fermi energy is calculated in zinc blende,
compensated n-type GaSb for donor densities between 10 16 and 10 19 cm− 3⁠. The …

Taking full account of nonparabolicity of a conduction-band dispersion, we investigate those
electronic excitations in the conduction band of an n-type narrow-gap semiconductor which …

We compare the LO-phonon–plasmon coupled mode spectra of homogenously doped and
Si+-implanted InP samples. Whereas a narrow L− peak similar to that of the uniformly doped …

For the past 50 years, the electronics industry has profited from their ability to follow Moore's
Law, doubling the performance of the computer chip approximately every two years …

Ultra-fast femtosecond laser micro-machining can lead to improved surface morphology and
a reduction in the heat-affected zone. In this paper, synchrotron x-ray topography (SXRT) …