Deals with lattice vibrations studied by Raman spectroscopy. First, a description of the
fundamentals of this technique is provided. Special emphasis is paid to a detailed …

We have verified the accuracy of free-charge determinations from Raman scattering in
doped semiconductors by comparing the results obtained from phonon–plasmon coupled …

Post-growth intermixing by rapid thermal annealing in self-assembled quantum dot (QD)
structures with and without capping has been investigated. Room-temperature …

Электронные свойства пассивированных различными сульфидными растворами
поверхностей $ n $-InP (100) изучались с помощью методов фотолюминесценции и …

Free carrier concentration is one of the important properties of semiconductor
devices/materials that may directly affect the performance of several applications in …

The evolution of nanopatterned InP surfaces by low-energy Ar+-ion irradiation and their
dependence on incidence angle were investigated by field emission scanning electron …

In this paper, we present the theory for calculating Raman line shapes as functions of the
Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities …

The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic
chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon …

Электронная и атомная структуры обработанных различными сульфидными
растворами поверхностей n-InP (100) исследовались с помощью методов …

In this letter, InP periodic nanostructures were synthesized by linearly polarised
femtosecond laser. Perfect morphologies of InP nanostructures can be obtained under an …