We report a Raman scattering determination of the energy difference E Γ− L between the Γ
conduction-band minimum and the L valley minima in n-type Ga 1− x In x As y Sb 1− y lattice …

Сообщается о результатах исследования структурных и электрических свойств
гомоэпитаксиального наномасштабного слоя (001) $ n $-GaP, толщиной 70 nm …

With the fast growing interest in nanotechnology, fabrication of regular arrays of
semiconductor nanostructures with controlled size and height is of great importance. These …

Reflectance measurements from p-type GaSb: Zn epitaxial films with different hole
concentrations (10 17–10 18 cm-3) have been investigated over the frequency region of 100 …

During this PhD project, the metal-insulator transition and superconductivity of highly boron-
doped single crystal diamond and related materials have been investigated. The critical …

The modified nonlinear wave dynamics due to band nonparabolicity and carrier heating,
arising from parametrically interacting electron–longitudinal optical phonons in a polar …

The downscaling and stressor technology of Si based devices is extending the performance
of the silicon channel to its limits. Further downsizing of CMOS devices below 16 nm will …

We use Raman scattering to study the LO–plasmon coupled modes (LOPCMs) of n-type
GaAs 1− x N x epilayers grown by molecular beam epitaxy (0.1%≤ x≤ 0.36%). We find that …

The InP nanodots of size 55 to 100 nm and height 25 to 30 nm have been synthesized by
low-energy Ar+-ion irradiation with different ion energies. Sizes and size distributions of the …

High energy light ion irradiation has been used to anneal H-related defect complexes and to
modify the electronic properties of semi-insulating InP (SI-InP). Raman and infrared …