Cryogenic etching of a-Si, SiO 2, and Si 3 N 4 materials by CHF 3/Ar inductively coupled
plasma is investigated in a range of temperature from− 140 to+ 20 C. Samples of the three …

Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or
thermally driven isotropic etching. In this work, we present a thermal ALE process for Si 3 N …

This article first presents quasi-in situ XPS measurements on Si 3 N 4 and a-Si samples after
exposure to an SiF 4/O 2 plasma at different cryogenic temperatures. A different behavior is …

An area-selective atomic layer deposition (AS-ALD) process is developed that achieves
increased selectivity by combining two strategies: i) selective enhancement using a small …

The ability to precisely form Si 3 N 4 spacers is critical to the success of dynamic random-
access memory and NAND (NOT AND) flash memory technology development. In this study …

In this work, atomic layer etching (ALE) of Si compounds using H2 or N2 plasma
modification followed by fluorine radical exposure is discussed. It is shown that the H2 …

Determination of the key chemical reaction pathways in cold atmospheric plasmas (CAPs) is
of great importance not only for understanding the spatiotemporal evolutions of the key …

Stable plasma ignition of remote plasma sources (RPSs) for various plasma processes is
essential to ensure the stability of the discharge, steady operating conditions, and high …

This article presents a complete plasma etching process to etch high aspect ratio patterns on
III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar …

The cyclic two-step process, comprised of energetic H 2 plasma followed by HF wet clean or
in situ NF 3 plasma, demonstrates Si 3 N 4 layer-by-layer removal capability exceeding 10 …