Deep level defects in p-type GaAs 1− x Bi x (x< 1%) and GaAs grown by molecular beam
epitaxy at substrate temperatures of 330 C and 370 C have been characterized by deep …

We report photoluminescence (PL) measurements on self-assembled Ga Sb∕ Ga As
quantum dots. As the laser excitation is increased from very low levels, the PL shows a …

We have developed III–V compound semiconductor multi-junction solar cells by a room-
temperature wafer-bonding technique to avoid the formation of dislocations and voids due to …

We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two‐
dimensional electron gases (2DEGs) with electron mobilities up to 2.0× 106 cm2/V s at 0.3 …

The limits of intrinsic carbon incorporation in very high purity GaAs grown by atmospheric
pressure metalorganic vapor phase epitaxy (MOVPE) were investigated by using a MOVPE …

Residual donor and acceptor species were studied in a series of high purity n‐type InP
epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine …

Al x Ga 1− x P (0≤ x≤ 1) epilayers are grown by OMVPE using TBP as a phosphorus
source. GaP epilayers with a specular surface are obtained at growth temperatures higher …

We have studied the carbon incorporation properties in MOCVD Al0. 7Ga0. 3As epilayers on
differently oriented surfaces by using either arsine or tertiarybutylarsine (TBAs). The present …

Gas phase decomposition studies have been combined with metalorganic vapor phase
epitaxy (MOVPE) growth and doping experiments to investigate the mechanism behind the …

InAs, InSb, InAsSb and the related bismuth containing alloys are useful materials for infrared
applications. A significant effort has been expended to develop new group III and group V …