The role of hydrogen in the growth of III-V compound semiconductors by organometallic
vapor phase epitaxy (OMVPE) is reviewed. Hydrogen is generally used as the carrier gas …

Gas phase and surface decomposition reactions of a novel arsenic precursor tris-
(dimethylamino) arsenic (DMAAs) have been studied. Optical fiber-based Fourier transform …

The incorporation of silicon from SiH 4 into GaAs grown using tertiarybutylarsine (tC 4 H 9
AsH 2 or TBAs) as the group V source has been investigated. The dependence of silicon …

Low temperature photoluminescence measurements were carried out for acceptor-doped
GaAs. Impurities were introduced by doping during molecular beam epitaxy (MBE) or liquid …

Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical
vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak …

We assess the opportunities for improving the quality and lowering the cost of thin crystalline
semiconductor films for photovoltaics. We find that novel growth and processing methods …

In this study, we report on an investigation using atomic force microscope (AFM) to study
lattice-matched InGaAs surface layers grown by MOVPE with two different sources of group …

The carbon-doping behavior of GaAs and AlGaAs grown by organometallic vapor phase
epitaxy was examined using AsH 3 or tertiarybutylarisine (TBAs) as the arsenic precursors …

The compensation ratio in high-purity n-type GaAs layers grown by metal-organic vapour
phase epitaxy was determined from low-temperature photoluminescence measurements …

The metalorganic chemical vapor deposition growth of ZnTe has been performed at
atmospheric pressure under helium and hydrogen carrier gases. Epitaxial growth was …