Alternative Group V Precursors for the Growth of Al-Based III-V Epitaxial Layers by OMVPE

WS Hobson, M Geva - MRS Online Proceedings Library (OPL), 1992 - cambridge.org
Tertiarybutylarsine (TBAs), tris-dimethylaminoarsenic (DMAA), and tertiarybutylphosphine
(TBP) were investigated as alternatives to arsine and phosphine for the growth of AlGaAs …

[PDF][PDF] Ga-based III-V Semiconductor Nanowires: Growth, New Catalysts and Optical Properties

BC da Silva - repositorio.unicamp.br
Solid state lightning presents huge technological and commercial implications and has been
an active area of research. Several optoeletronic devices rely on the ability to generate …

Growth mode and effect of carrier gas on In0. 53Ga0. 47As/InP surface morphology grown with trimethylarsine and arsine

H Dumont, L Auvray, J Dazord, Y Monteil, J Bouix… - Applied surface …, 1999 - Elsevier
Different growth mode have been observed for InGaAs/InP grown with trimethylarsine and
arsine by Metalorganic Vapor Phase Epitaxy (MOVPE) when changing the carrier gas. The …

High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium

RM Biefeld, HC Chui, BE Hammons, WG Breiland… - Journal of crystal …, 1996 - Elsevier
We have grown high purity AlGaAs by metalorganic chemical vapor deposition using
tertiarybutylarsine (TBA), trimethylgallium, and trimethylaluminum. We have achieved p-type …

Study of Silicon Incorporation in GaAs MOVPE Layers Grown with Tertiarybutylarsine

JM Redwing, TF Kuech, H Simka… - MRS Online Proceedings …, 1993 - cambridge.org
MOVPE growth experiments have been used to evaluate the role of gas phase and surface
chemistry in the silicon doping of GaAs films grown using SiH4 and Si2H6 dopant sources …

[PDF][PDF] Ga-based III-V semiconductor nanowires: growth, new catalysts and optical properties= Nanofios semicondutores III-V baseados em Ga: crescimento, novos …

BC da Silva - 2020 - core.ac.uk
Solid state lightning presents huge technological and commercial implications and has been
an active area of research. Several optoeletronic devices rely on the ability to generate …

[PDF][PDF] The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE).

D Koleske, RM Biefeld, JG Cederberg - 2014 - osti.gov
Since the publication of the Handbook of Crystal Growth in 1994 significant changes have
taken place in the science and technology of Metal Organic Vapor Phase Epitaxy …

Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic)

A Suhandi, H Sutanto, P Arifin… - Jurnal Matematika …, 2009 - garuda.kemdikbud.go.id
Abstract Gallium Arsenide (GaAs) film have been grown by Metalorganic Chemical Vapor
Deposition (MOCVD) method on Semi Insulating-Gallium Arsenide (SI-GaAs) substrates …

Metalorganic chemical vapor deposition of AlGaAs using tertiarybuthylarsine

H Ishikawa, T Izumiya… - Japanese journal of …, 1995 - iopscience.iop.org
The amounts of intrinsic carbon incorporation in AlGaAs epilayers grown by metalorganic
chemical vapor deposition (MOCVD) were compared between ones grown using AsH 3 and …

MOCVD von Gruppe-13 Nitriden mit Einkomponentenvorstufen

W Rogge - 2003 - hss-opus.ub.ruhr-uni-bochum.de
RUB-Repository - MOCVD von Gruppe-13 Nitriden mit Einkomponentenvorstufen Deutsch
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