A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy.
JM Redwing - 1995 - elibrary.ru
An experimental methodology was developed to study dopant incorporation from chemical
sources during the metal-organic vapor phase epitaxy (MOVPE) of GaAs. Gas phase …
sources during the metal-organic vapor phase epitaxy (MOVPE) of GaAs. Gas phase …
[PDF][PDF] SIFAT OPTIK FILM TIPIS GaAs YANG DITUMBUHKAN DENGAN TEKNIK MOCVD VERTIKALMENGGUNAKAN TMGa AND TDMAAs
Telah dilakukan studi eksperimen untuk meneliti pengaruh penggunaan sumber
metalorganik baru yakni trimethylgallium (TMGa) dan trisdimethylaminoarsenic (TDMAAs) …
metalorganik baru yakni trimethylgallium (TMGa) dan trisdimethylaminoarsenic (TDMAAs) …
[图书][B] Photoluminescence and Resonance Raman Spectroscopy of MOCVD Grown GaAs/AlGaAs Core-Shell Nanowires
OD Leaffer - 2013 - search.proquest.com
This work describes experiments conducted on GaAs/AlGaAs core-shell nanowires. The
GaAs/AlGaAs materials system has been a major platform in the development of …
GaAs/AlGaAs materials system has been a major platform in the development of …
[PDF][PDF] KARAKTERISTIK FILM TIPIS GaAs YANG DITUMBUHKAN DENGAN METODE MOCVD MENGGUNAKAN SUMBER METALORGANIK BARU TDMAAs …
Film tipis GaAs telah berhasil ditumbuhkan dengan metode MOCVD (Metalorganic
Chemical Vapour Deposition) di atas substrat SI-GaAs menggunakan sumber metalorganik …
Chemical Vapour Deposition) di atas substrat SI-GaAs menggunakan sumber metalorganik …
[HTML][HTML] METALORGANIC PRECURSORS FOR VAPOUR PHASE EPITAXY; PRECURSOR CHEMISTRY IN THE GAS PHASE AND AT INTERFACES.
AC Jones - CVD-XII: Proceedings of the Twelfth International …, 1993 - books.google.com
Metalorganic compounds are finding an increasing application in the growth of III-V and II-VI
semiconductor layers by MOVPE and CBE. In the absence of extrinsic trace metal impurities …
semiconductor layers by MOVPE and CBE. In the absence of extrinsic trace metal impurities …
[PDF][PDF] A. Suhandi1, 3), H. Sutanto2, 3), P. Arifin3), M. Budiman3), dan M. Barmawi3) Jurusan Fisika FPMIPA UPI Bandung 2) Jurusan Fisika FMIPA UNDIP Semarang …
SM TDMAA - JMS, 2005 - researchgate.net
Film tipis galium arsenat (GaAs) telah berhasil ditumbuhkan dengan metode MOCVD
(Metalorganic Chemical Vapour Deposition) di atas substrat semi insulator-galium arsenide …
(Metalorganic Chemical Vapour Deposition) di atas substrat semi insulator-galium arsenide …
Carbon Doping of GaAs by OMVPE Using CC14: A Comparison of Gallium and Arsenic Precursors
WSH Son - MRS Online Proceedings Library (OPL), 1991 - cambridge.org
The carbon doping properties of GaAs with carbon tetrachloride as the dopant source were
examined using trimethylgallium (TMGa) or triethylgallium (TEGa) as the gallium precursors …
examined using trimethylgallium (TMGa) or triethylgallium (TEGa) as the gallium precursors …