Vertical stacking of different two-dimensional (2D) materials into van der Waals
heterostructures exploits the properties of individual materials as well as their interlayer …

Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect
transistors (TFETs) in the pursuit of low-power electronics for the Internet of Things era. This …

In this work, we demonstrate the usability of a fully-2D-material based device consisting of
MoS 2/WSe 2 heterojunction encapsulated by hBN and contacted by graphene as …

Low-frequency electronic noise in charge-density-wave van der Waals materials has been
an important characteristic, providing information about the material quality, phase …

The advent of two-dimensional (2D) materials has led to innovative and compact electronic
devices with remarkable properties. In this work, we introduce a switchable bidirectional …

To give consideration to both chip density and device performance, an In0. 53Ga0. 47As
vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and …

We report a computational study on the possibility of designing nanoscale organic tunnel
field-effect transistors (OTFETs) with a subthreshold swing (SS) much smaller than 60 …

By combining two-dimensional (2D) materials with different band alignments at the contact
interface, van der Waals heterostructures (vdWHs) can achieve multifunctional device …

Colloidal quantum dots (CQDs) have emerged as promising materials for thin film
photodiodes (TFPDs) in the short-wavelength infrared detection range, offering an …

Low-frequency electronic noise in charge-density-wave van der Waals materials has been
an important characteristic, providing information about the material quality, phase …