Roadmap for focused ion beam technologies

K Höflich, G Hobler, FI Allen, T Wirtz, G Rius… - Applied Physics …, 2023 - pubs.aip.org
The focused ion beam (FIB) is a powerful tool for fabrication, modification, and
characterization of materials down to the nanoscale. Starting with the gallium FIB, which was …

Surface nanopatterning by ion beam irradiation: compositional effects

L Vázquez, A Redondo-Cubero, K Lorenz… - Journal of Physics …, 2022 - iopscience.iop.org
Surface nanopatterning induced by ion beam irradiation (IBI) has emerged as an effective
nanostructuring technique since it induces patterns on large areas of a wide variety of …

Two-dimensional materials under ion irradiation: from defect production to structure and property engineering

M Ghorbani-Asl, S Kretschmer… - Defects in Two …, 2022 - Elsevier
Similar to their bulk 3D counterparts, the properties of two-dimensional (2D) materials can
be tuned by controllable introduction of impurities and defects using beams of energetic …

Nonlinear effects in low-energy ion sputtering of solids

Y Kudriavtsev, R Asomoza, A Hernandez… - Journal of Vacuum …, 2020 - pubs.aip.org
In this paper, we demonstrate that the sputtering of solids by ions of low (< 30 keV) and even
ultralow energies (< 2 keV) is accompanied by nonlinear effects. These nonlinear effects are …

Swelling as a stabilizing mechanism in irradiated thin films: II. Effect of swelling rate

T Evans, S Norris - Journal of Physics: Condensed Matter, 2022 - iopscience.iop.org
It has long been observed experimentally that energetic ion-beam irradiation of
semiconductor surfaces may lead to spontaneous nanopattern formation. For most …

Porous germanium formed by low energy high dose Ag+-ion implantation

AL Stepanov, VI Nuzhdin, VF Valeev, AM Rogov… - Vacuum, 2018 - Elsevier
A technical approach is proposed for the synthesis of thin porous PGe layers with Ag
nanoparticles based on low-energy high-dose implantation of single-crystal c-Ge metal ions …

Optical properties of porous GaAs formed by low energy ion implantation

A Hernández, Y Kudriavtsev, C Salinas-Fuentes… - Vacuum, 2020 - Elsevier
We report about chemical, structural and optical characteristics of porous GaAs near-surface
layers formed by low energy and high fluence ion implantation of Si+ and Ge+ ions. The …

White luminescence emission from silicon implanted germanium

AG Hernández, AE Escobosa-Echavarría… - Applied Surface …, 2018 - Elsevier
Germanium crystals were implanted with low-energy and high-dose silicon ions. The
implantation led to amorphization of a near-surface layer due to the formation of many …

Swelling as a stabilizing mechanism in irradiated thin films: III. Effect on critical angle in a composite model

T Evans, S Norris - Journal of Physics: Condensed Matter, 2023 - iopscience.iop.org
Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous
pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against …

Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

N Oishi, T Yasuoka, T Kawaharamura… - Journal of Vacuum …, 2023 - pubs.aip.org
Nanostructuring via ion beam irradiation on Ge substrates can be activated by ion beam
sputtering and self-organization of point defects (SPDs). For evaluating the mechanism by …