[HTML][HTML] Electrostatically actuated nanobeam-based nanoelectromechanical switches–materials solutions and operational conditions

L Jasulaneca, J Kosmaca, R Meija… - Beilstein journal of …, 2018 - beilstein-journals.org
This review summarizes relevant research in the field of electrostatically actuated nanobeam-
based nanoelectromechanical (NEM) switches. The main switch architectures and structural …

Three-dimensional integration of complementary metal-oxide-semiconductor-nanoelectromechanical hybrid reconfigurable circuits

WY Choi, YJ Kim - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM)
hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) …

[HTML][HTML] Fabrication and characterization of double-and single-clamped CuO nanowire based nanoelectromechanical switches

L Jasulaneca, AI Livshits, R Meija, J Kosmaca… - Nanomaterials, 2021 - mdpi.com
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation
with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power …

On the notion of vdW-force loaded hysteretic switching for precise release voltage design in all-metal electrostatic logic relay

S Kumar, DS Arya, KS Raghav, M Garg… - Sensors and Actuators A …, 2021 - Elsevier
In electrostatic switches, the inability to correlate hysteretic-switching (an electrical attribute)
and adhesion force (a structural attribute) makes the predictive design difficult. The van-der …

A monolithically integrated torsional CMOS-MEMS relay

M Riverola, G Sobreviela, F Torres… - Journal of …, 2016 - iopscience.iop.org
We report experimental demonstrations of a torsional microelectromechanical (MEM) relay
fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry …

Ultrathin internal dielectric electrostatic actuator for reduced pull-in voltage and bidirectional actuation

SK Verma, B Mitra - Journal of Micromechanics and …, 2023 - iopscience.iop.org
Direction and analog deflection control, as well as low voltage digital switching are the most
desirable attributes in electrostatic actuators for current MEMS applications. In this work we …

Optical properties of nanocrystalline La2O3 dielectric films deposited by radio frequency magnetron sputtering

SB Brachetti-Sibaja, SE Rodil, MA Domínguez-Crespo… - Thin Solid Films, 2017 - Elsevier
La 2 O 3 thin films were successfully synthesized by rf magnetron sputtering technique. The
effect of power, deposition time and substrate temperature on the formation and optical …

Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization

H Pajouhi, AY Jou, R Jain, A Ziabari, A Shakouri… - Applied Physics …, 2015 - pubs.aip.org
A highly flexible microelectrode array with an embedded complementary metal oxide
semiconductor (CMOS) instrumentation amplifier suitable for sensing surfaces of biological …

NEMS switches for ultra-low-power digital logic: Challenges and opportunities

JL Munoz-Gamarra, C Poulain… - 2016 IEEE 16th …, 2016 - ieeexplore.ieee.org
A renewed interest in mechanical computing has emerged in Microelectronics in the last
years as a solution to the increasing static power density of CMOS technologies as they are …

[HTML][HTML] High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

M Riverola, F Torres, A Uranga, N Barniol - Micromachines, 2018 - mdpi.com
In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm
complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw …