Submicron scaling of HBTs
MJW Rodwell, M Urteaga, T Mathew… - … on Electron Devices, 2001 - ieeexplore.ieee.org
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed.
High bandwidths are obtained by thinning the base and collector layers, increasing emitter …
High bandwidths are obtained by thinning the base and collector layers, increasing emitter …
InP bipolar ICs: Scaling roadmaps, frequency limits, manufacturable technologies
MJW Rodwell, M Le, B Brar - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-
band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield …
band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield …
Scaling of InGaAs/InAlAs HBTs for high speed mixed-signal and mm-wave ICs
MJW Rodwell, M Urteaga, Y Betser… - … Journal of High …, 2001 - World Scientific
High bandwidths are obtained with heterojunction bipolar transistors by thinning the base
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
Submicron InP-based HBTs for ultra-high frequency amplifiers
M Urteaga, S Krishnan, D Scott, Y Wei… - … journal of high speed …, 2003 - World Scientific
Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed
transistor operation is submicron device scaling. High bandwidths are obtained with …
transistor operation is submicron device scaling. High bandwidths are obtained with …
MJW RODWELL, M. URTEAGA, Y. BETSER*, T. MATHEW, P. KRISHNAN, D. SCOTT, S. JAGANATHAN, D. MENSA, J. GUTHRIE*, R. PULLELA
Q LEES, B AGARWAL… - … : Towards 100 GHz …, 2001 - books.google.com
High bandwidths are obtained with heterojunction bipolar transistors by thinning the base
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
[引用][C] Bipolar transistor technology: Past and future directions
PM Asbeck, T Nakamura - IEEE Transactions on Electron …, 2001 - ieeexplore.ieee.org
Laboratories in late 1947 and early 1948 was the first step in the development of today's
semiconductor electronics industry. Currently transistor production is on the order of 10/year …
semiconductor electronics industry. Currently transistor production is on the order of 10/year …
[引用][C] Electron Bragg Reflectors for Improved Temperature Stability of InGaAsP Quantum Well Lasers
D Adams - 1993