Tuning surface properties of low dimensional materials via strain engineering

S Yang, F Liu, C Wu, S Yang - Small, 2016 - Wiley Online Library
The promising and versatile applications of low dimensional materials are largely due to
their surface properties, which along with their underlying electronic structures have been …

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

YL Tsai, KY Lai, MJ Lee, YK Liao, BS Ooi… - Progress in Quantum …, 2016 - Elsevier
Photon management is essential in improving the performances of optoelectronic devices
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …

High‐resolution mapping of strain partitioning and relaxation in InGaN/GaN nanowire heterostructures

B Park, JK Lee, CT Koch, M Wölz… - Advanced …, 2022 - Wiley Online Library
Abstract Growing an InxGa1− xN/GaN (InGaN/GaN) multi‐quantum well (MQW)
heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light …

Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam …

N Aggarwal, STC Krishna, L Goswami… - Crystal Growth & …, 2015 - ACS Publications
We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN
films on a metal–organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by …

Strain in nanowires and nanowire heterostructures

F Glas - Semiconductors and Semimetals, 2015 - Elsevier
This chapter examines strains and stresses in semiconductor nanowires, why they occur,
how they manifest themselves, how they can be calculated and measured, and also how …

Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1-xN/Si (111) heterostructures with nanocolumn morphology of …

PV Seredin, DL Goloshchapov, АS Lenshin… - Physica E: Low …, 2018 - Elsevier
Integrated heterostructures with a nanocolumn morphology of the film In x Ga 1-x N were
grown using the method of molecular beam epitaxy, with plasm activation of nitrogen on a …

Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis

I Mediavilla, JL Pura, VG Hinojosa, B Galiana… - ACS …, 2024 - ACS Publications
We present a micro-Raman study of InP/InGaP tandem junction photovoltaic nanowires.
These nanowires render possible InGaP compositions that cannot be made in thin films due …

Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy

SY Woo, N Gauquelin, HPT Nguyen, Z Mi… - …, 2015 - iopscience.iop.org
The interplay between strain and composition is at the basis of heterostructure design to
engineer new properties. The influence of the strain distribution on the incorporation of …

Plasmonic red-light-emission enhancement by honeycomb-latticed InGaN/GaN ordered fine nanocolumn arrays

T Oto, A Aihara, K Motoyama, S Ishizawa… - Applied Physics …, 2023 - iopscience.iop.org
By using ordered fine nanocolumns suitable for high-efficiency red-emission, emission
enhancement based on surface plasmon polariton (SPP) coupling was successfully …

Correlative high‐resolution mapping of strain and charge density in a strained piezoelectric multilayer

K Song, CT Koch, JK Lee, DY Kim… - Advanced Materials …, 2015 - Wiley Online Library
A key to strain engineering of piezoelectric semiconductor devices is the quantitative
assessment of the strain‐charge relationship. This is particularly demanding in current …