A Kuroda, A Kobayashi, D Ishikawa - US Patent 10,910,262, 2021 - Google Patents
D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A 3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …
C Zhu, K Shrestha, S Haukka - US Patent 10,851,456, 2020 - Google Patents
A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …
TJV Blanquart, SP Haukka - US Patent 10,867,788, 2020 - Google Patents
The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first precursor comprising a silicon halide in the reactor; introducing a second precursor in the …
D Kohen, HB Profijt, A Kretzschmar - US Patent 10,923,344, 2021 - Google Patents
A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …
L Jdira, H Terhorst, N Tsuji, S Yoshio - US Patent 10,844,484, 2020 - Google Patents
An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first …
JW Maes, W Knaepen, KK Kachel… - US Patent …, 2022 - Google Patents
A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to …
K Kachel, D De Roest - US Patent 10,928,731, 2021 - Google Patents
The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material. Examples of the disclosure provide a method of forming a structure that includes …