The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-
/dot-like active regions were developed on InP substrates dedicated to cover the extended …

The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-
like objects grown by molecular beam epitaxy have been investigated. These …

Photoreflectance (PR) measurements have been performed on In As∕ In 0.53 Ga 0.23 Al
0.24 As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The …

We calculate the spectrum of excited exciton states in application-relevant self-assembled
pyramidal quantum dots grown in InAs/InP and InAs/AlGaInAs material systems. These types …

This paper deals with the simulation of the emission characteristics of self-assembled
semiconductor quantum dash (QDash) active materials, characterized by high length-to …

The gain and related characteristics of quantum dash structures are modeled and analyzed
using a parabolic effective-mass theory and the density-matrix theory. Size fluctuation is …

Photoluminescence and photoreflectance measurements have been performed to
investigate molecular-beam-epitaxy-grown InAs/InGaAlAs/InP structures with different-size …

Conclusion: We have reported on the fabrication and performance of laterally coupled DFB
lasers based on InP QDash gain media operating in the fibre optics wavelength range near …

Quantum dot-based lasers have long been predicted to have interesting properties as well
as performance advantages over more conventional quantum well-based devices. The …