[HTML][HTML] Suspended AlGaAs waveguide for integrated nonlinear photonics
Al x Ga 1-x As compound is one of the promising platforms to realize high performance
nonlinear optical devices, which provide ultra-high third order nonlinearity and negligible …
nonlinear optical devices, which provide ultra-high third order nonlinearity and negligible …
Nonlinear photonics on-a-chip in III-V semiconductors: quest for promising material candidates
We propose several designs of nonlinear optical waveguides based on quaternary III-V
semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely …
semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely …
Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide
E Delcourt, N Jebali, L Bodiou, M Baillieul… - Optical Materials …, 2020 - opg.optica.org
Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated
in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film …
in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film …
Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides
We report on the study of the third-order nonlinear optical interactions in In x Ga 1-x As y P 1-
y/InP strip-loaded waveguides. The material composition and waveguide structures were …
y/InP strip-loaded waveguides. The material composition and waveguide structures were …
Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can
also be exploited for optical limiting or switching applications. Thus, characterization of …
also be exploited for optical limiting or switching applications. Thus, characterization of …
Vertically integrated spot-size converter in AlGaAs-GaAs
We report on the demonstration of a spot size converter (SSC) for monolithic photonic
integration at a wavelength of 850 nm on a GaAs substrate. We designed and fabricated a …
integration at a wavelength of 850 nm on a GaAs substrate. We designed and fabricated a …
Fabrication of III-V integrated photonic devices
K Awan - 2018 - ruor.uottawa.ca
This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …
Mechanisms of Enhancement of Nonlinear Optical Interactions in Nonlinear Photonic Devices Based on III-V Semiconductors
E Mobini - 2022 - ruor.uottawa.ca
The family of III-V semiconductors is of high significance in photonics for two main reasons.
First, not only they are the most practical material platforms for active photonic devices but …
First, not only they are the most practical material platforms for active photonic devices but …
Orthogonal four wave mixing in AlGaAs nanowire waveguides
KA Johnson, JS Aitchison - 2019 Conference on Lasers and …, 2019 - ieeexplore.ieee.org
Orthogonal Four Wave Mixing in AlGaAs Nanowire Waveguides Page 1 JW2A.36.pdf CLEO
2019 © OSA 2019 Orthogonal Four Wave Mixing in AlGaAs Nanowire Waveguides Kyle A …
2019 © OSA 2019 Orthogonal Four Wave Mixing in AlGaAs Nanowire Waveguides Kyle A …
2D high-contrast AlGaAs waveguides for nonlinear applications
P Kultavewuti, Z Liao… - 2016 IEEE Photonics …, 2016 - ieeexplore.ieee.org
2D high-contrast AlGaAs waveguides for nonlinear applications Page 1 2D high-contrast
AlGaAs waveguides for nonlinear applications Pisek Kultavewuti*, Zhongfa Liao, J. Stewart …
AlGaAs waveguides for nonlinear applications Pisek Kultavewuti*, Zhongfa Liao, J. Stewart …