Photonic integration and all-optical signal processing are promising solutions to the
increasing demand for high-bandwidth and high-speed communication systems. III-V …

To our best knowledge, it is the first time that the AlGaAs-on-AlOx waveguides are proposed
to demonstrate wavelength conversion based on third-order nonlinear effects. Waveguides …

Simultaneous measurements of the two-photon absorption coefficient and the free-carrier
absorption cross-section in AlGaAs waveg Page 1 FW1D.4.pdf Frontiers in Optics / Laser …

We designed and fabricated a two-guiding-layer AlGaAs/GaAs chip. It consists of a lower
layer facilitating end-fire coupling and an upper layer for high contrast waveguides, and a …

Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high
thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due …

We designed a three-guide-layer AlGaAs chip consisting of a lower layer facilitating end-fire
coupling, a middle layer for high confinement waveguides and a top SQW-based waveguide …

A full-vectorial theory of third-order nonlinear effects is used to derive expressions for the
nonlinear coefficients (NLCs) of waveguide modes in high-confinement Aluminum Gallium …

This Master's dissertation focuses on exploring optical nonlinearities in IIIV semiconductors.
This work covers a range of III-V materials and a few devices. To begin with, optical …

The rapidly growing Internet services put a higher bandwidth requirement on datacenters. A
low-power and low-cost photonic integrated circuit (PIC), using wavelength division …

Conventional silicon-based electronics have developed dramatically in recent years;
however, their optimum integration level is reaching its limits. To meet the requirements of …