Exploiting new interconnect technologies in on-chip communication

J Kim, K Choi, G Loh - IEEE Journal on Emerging and Selected …, 2012 - ieeexplore.ieee.org
The continuing scaling of transistors has increased the number of cores available in current
processors, and the number of cores is expected to continue to increase. In such many core …

Quantifying the relationship between the power delivery network and architectural policies in a 3D-stacked memory device

M Shevgoor, JS Kim, N Chatterjee… - Proceedings of the 46th …, 2013 - dl.acm.org
Many of the pins on a modern chip are used for power delivery. If fewer pins were used to
supply the same current, the wires and pins used for power delivery would have to carry …

Wide I/O or LPDDR? Exploration and analysis of performance, power and temperature trade-offs of emerging DRAM technologies in embedded MPSoCs

MH Hajkazemi, MK Tavana… - 2015 33rd IEEE …, 2015 - ieeexplore.ieee.org
Wide I/O, the recent JEDEC DRAM standard, has created an opportunity for architects to
overcome the" memory wall" challenge. 2.5 D/3D integration enables Wide-IO to deliver high …

Three dimensional chip structure implementing machine trained network

SL Teig, K Duong, J Delacruz - US Patent 10,719,762, 2020 - Google Patents
Some embodiments provide a three-dimensional (3D) cir cuit structure that has two or more
vertically stacked bonded layers with a machine-trained network on at least one bonded …

A 0.9 pJ/bit, 12.8 GByte/s WideIO memory interface in a 3D-IC NoC-based MPSoC

D Dutoit, C Bernard, S Chéramy… - 2013 Symposium on …, 2013 - ieeexplore.ieee.org
3D Integrated Circuit (3D-IC) opens architecture opportunities for improved SoC-to-memory
interconnect bandwidth between dies. This paper presents the design of a two-tier 3D-IC …

Xylem: Enhancing vertical thermal conduction in 3D processor-memory stacks

A Agrawal, J Torrellas, S Idgunji - Proceedings of the 50th Annual IEEE …, 2017 - dl.acm.org
In upcoming architectures that stack processor and DRAM dies, temperatures are higher
because of the increased transistor density and the high inter-layer thermal resistance …

Evaluation of TSV and micro-bump probing for wide I/O testing

K Smith, P Hanaway, M Jolley… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
Practical silicon stacking requires pre-tested dies, but contact probing of TSV interconnects
requires much higher density, lower probing forces, and lower cost per pin than …

3D chip with shielded clock lines

J Delacruz, SL Teig, I Mohammed - US Patent 10,593,667, 2020 - Google Patents
Some embodiments of the invention provide a three-dimensional (3D) circuit that is formed
by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share …

Stacked IC structure with system level wiring on multiple sides of the IC die

I Mohammed, SL Teig, J Delacruz - US Patent 10,580,735, 2020 - Google Patents
Some embodiments of the invention provide a three-dimen sional (3D) circuit that is formed
by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share …

[HTML][HTML] Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives

Y Zhu, S Ma, X Sun, J Chen, M Miao, Y Jin - Microelectronic Engineering, 2014 - Elsevier
Copper electro-chemical deposition (ECD) of through silicon via (TSV) is a key challenge of
3D integration. This paper presents a numerical modeling of TSV filling concerning the …