M Shevgoor, JS Kim, N Chatterjee… - Proceedings of the 46th …, 2013 - dl.acm.org
Many of the pins on a modern chip are used for power delivery. If fewer pins were used to supply the same current, the wires and pins used for power delivery would have to carry …
Wide I/O, the recent JEDEC DRAM standard, has created an opportunity for architects to overcome the" memory wall" challenge. 2.5 D/3D integration enables Wide-IO to deliver high …
SL Teig, K Duong, J Delacruz - US Patent 10,719,762, 2020 - Google Patents
Some embodiments provide a three-dimensional (3D) cir cuit structure that has two or more vertically stacked bonded layers with a machine-trained network on at least one bonded …
D Dutoit, C Bernard, S Chéramy… - 2013 Symposium on …, 2013 - ieeexplore.ieee.org
3D Integrated Circuit (3D-IC) opens architecture opportunities for improved SoC-to-memory interconnect bandwidth between dies. This paper presents the design of a two-tier 3D-IC …
A Agrawal, J Torrellas, S Idgunji - Proceedings of the 50th Annual IEEE …, 2017 - dl.acm.org
In upcoming architectures that stack processor and DRAM dies, temperatures are higher because of the increased transistor density and the high inter-layer thermal resistance …
K Smith, P Hanaway, M Jolley… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
Practical silicon stacking requires pre-tested dies, but contact probing of TSV interconnects requires much higher density, lower probing forces, and lower cost per pin than …
J Delacruz, SL Teig, I Mohammed - US Patent 10,593,667, 2020 - Google Patents
Some embodiments of the invention provide a three-dimensional (3D) circuit that is formed by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share …
I Mohammed, SL Teig, J Delacruz - US Patent 10,580,735, 2020 - Google Patents
Some embodiments of the invention provide a three-dimen sional (3D) circuit that is formed by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share …
Y Zhu, S Ma, X Sun, J Chen, M Miao, Y Jin - Microelectronic Engineering, 2014 - Elsevier
Copper electro-chemical deposition (ECD) of through silicon via (TSV) is a key challenge of 3D integration. This paper presents a numerical modeling of TSV filling concerning the …