Materials selection approaches and fabrication methods in RF MEMS switches
A state of the art review on Radio Frequency Micro-Electromechanical Systems (RF MEMS)
capacitive switches is reported by considering two key aspects:(1) materials selection …
capacitive switches is reported by considering two key aspects:(1) materials selection …
Comprehensive review of low pull-in voltage RF NEMS switches
R Chaudhary, PR Mudimela - Microsystem Technologies, 2023 - Springer
The present study focuses on state-of-the-art of the demand, operating principles, design
parameters, different materials for beam and dielectric, already existing technologies and …
parameters, different materials for beam and dielectric, already existing technologies and …
An intensive approach to optimize capacitive type RF MEMS shunt switch
PA Kumar, KS Rao, KG Sravani, B Balaji, M Aditya… - Microelectronics …, 2021 - Elsevier
Optimization of the RF MEMS switch is essential to enhance its performance characteristics
at high frequency Millimeterwave applications. Many optimization techniques have been …
at high frequency Millimeterwave applications. Many optimization techniques have been …
Performance analysis of EBG bandstop filter using U: shaped meander type electrostatically actuated RF MEMS switch
G Shanthi, KS Rao, KG Sravani - Microsystem Technologies, 2021 - Springer
Now a days, filters became essential component in many of the RF, satellites and wireless
communication networks and system. The size and complexity of the system increases while …
communication networks and system. The size and complexity of the system increases while …
Enabling electrically tunable radio frequency components with advanced microfabrication and thin film techniques
Abstract Multi-function, multiband, cost-effective, miniaturized reconfigurable radio frequency
(RF) components are highly demanded in modern and future wireless communication …
(RF) components are highly demanded in modern and future wireless communication …
Device design, simulation and qualitative analysis of gaasp/6h-sic/gan metal semiconductor field effect transistor
B Balaji, KS Rao, M Aditya, KG Sravani - Silicon, 2022 - Springer
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …
effect transistor with undoped region under gate. The device is made of semiconductor …
A qualitative review on tunnel field effect transistor-operation, advances, and applications
Abstract Tunnel Field Effect Transistor (TFET) has become one of the promising devices to
be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …
be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …
Design, performance analysis of gaas/6h-sic/algan metal semiconductor fet in submicron technology
B Balaji, KS Rao, KG Sravani, M Aditya - Silicon, 2022 - Springer
A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
Target application based design approach for RF MEMS switches using artificial neural networks
LN Thalluri, S Bommu, SM Rao, KS Rao… - … on Electrical and …, 2022 - Springer
In this paper, a target application-based design approach for RF MEMS switches using
artificial neural networks (ANN) is presented. ANN approach is used to decide the …
artificial neural networks (ANN) is presented. ANN approach is used to decide the …
Investigations on beam membrane and dielectric materials using Ashby's methodology and their impact on the performance of a MEMS capacitive switch
The micro-electro-mechanical-system switch performance significantly depends on
materials used for the design of different components. The two most important elements of …
materials used for the design of different components. The two most important elements of …