Influence of a Thin V2O3 Spacer on Interlayer Interactions in Fe-Ni/V2O3/FeNi Film Structures

GS Patrin, AV Kobyakov, VI Yushkov, IO Anisimov… - Processes, 2023 - mdpi.com
In this paper, we explore the suggestions of the results of experimental studies on low-
dimensional layered systems in FeNi/V2O3/FeNi film structures. The multifunctional material …

Mott resistive switching initiated by topological defects

A Milloch, I Figueruelo-Campanero, WF Hsu… - arXiv preprint arXiv …, 2024 - arxiv.org
Resistive switching is the fundamental process that triggers the sudden change of the
electrical properties in solid-state devices under the action of intense electric fields. Despite …

Stabilization of metallic phase in nanostructured hollow V2O3 spheres prepared by ultrasonic spray pyrolysis

AV Dmitriev, EV Shalaeva, EV Vladimirova… - Materials Research …, 2023 - Elsevier
In the development of nanostructured V 2 O 3 materials, the topical issue is to elucidate the
factors that affect the temperature of a metal-insulator transition (MIT). In this work, we study …

Terahertz transport dynamics in the metal-insulator transition of V2O3 thin film

YY Luo, FH Su, C Zhang, L Zhong, SS Pan, SC Xu… - Optics …, 2017 - Elsevier
The dynamic behavior of thermally-induced metal-insulator transition of V 2 O 3 thin film on
Si substrate grown by reactive magnetron sputtering was investigated by the terahertz time …

Mixing properties of Al2O3 (0001)-supported M 2O3 and MM′ O3 monolayers (M, M′= Ti, V, Cr, Fe)

C Noguera, J Goniakowski - Journal of Physics: Condensed …, 2021 - iopscience.iop.org
Considering the importance of sub-monolayer transition metal oxides supported on another
oxide in many industrial processes, with the help of a DFT+ U approach, we provide …

Optical investigation of the metal-insulator transition in the manganite films with the thickness dependence

IW Seo, YS Lee, JW Seo, SH Baek - Current Applied Physics, 2019 - Elsevier
We investigated the optical response of La 0.67 Sr 0.33 MnO 3 (LSMO) films which show the
metal-insulator transition (MIT) with the film thickness dependence. By using spectroscopic …

[PDF][PDF] Electronic Coherent Control of an Insulator-to-Metal Mott Transition

P Franceschini, VR Policht, A Milloch… - arXiv preprint arXiv …, 2022 - academia.edu
The ability to control matter transformations along quantum coherent pathways is key for
opening new frontiers in condensed matter physics, with broader impact on the development …

Mott resistive switching initiated by topological defects

C Giannetti, A Milloch, I Figueruelo-Campanero… - 2024 - researchsquare.com
Avalanche resistive switching is the fundamental process that triggers the sudden change of
the electrical properties in solid-state devices under the action of intense electric fields [1] …

Change in the optical spectrum of with applied uniaxial strain

T Saiki, S Ohkubo, K Funahashi, T Yamazaki, T Kajita… - Physical Review B, 2020 - APS
We measured the optical reflectivity spectra under applied uniaxial strain for bulk single
crystals of BaV 10 O 15, which exhibits orbital ordering at 130 K. We found that, with …

[引用][C] Positive and Negative Pressure Regimes in Anisotropically Strained V

E Barazani, D Das, C Huang, A Rakshit, C Saguy… - 2023