Analysis and design of multi-stacked FET power amplifier with phase-compensation inductors in Millimeter-wave band
Stacked-FET topology is analyzed to increase the output power of a power amplifier (PA) in
the millimeter-wave (mm-wave) band. In the mm-wave band, parasitic capacitances of the …
the millimeter-wave (mm-wave) band. In the mm-wave band, parasitic capacitances of the …
A High-Efficiency E-band Power Amplifier with Optimized Output Matching Network in a 28-nm Bulk CMOS
G Park, S Park, S Jeon - … on Circuits and Systems II: Express …, 2023 - ieeexplore.ieee.org
This brief presents an E-band high-efficiency power amplifier (PA) implemented in a 28-nm
bulk CMOS technology. The output matching network (OMN) is optimized for high power and …
bulk CMOS technology. The output matching network (OMN) is optimized for high power and …