In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Continued downscaling of semiconductor devices has placed stringent constraints on all
aspects of the fabrication process including plasma-assisted anisotropic etching. To address …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication.
Experts in the fields of plasma processing have contributed to addressing the increasingly …

Atomic layer etching (ALE) provides Ångström-level control over material removal and
holds potential for addressing the challenges in nanomanufacturing faced by conventional …

Self-limiting reactions of ammonium salt in CHF 3/O 2 downstream plasma were
demonstrated for thermal-cyclic atomic layer etching (ALE) of Si 3 N 4. In situ x-ray …

Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or
thermally driven isotropic etching. In this work, we present a thermal ALE process for Si 3 N …

Highly selective plasma etching of silicon nitride (Si 3 N 4), while not etching silicon dioxide
(SiO 2), is a critical step in the fabrication of microelectronics devices. In many applications …

Dramatic advances are being made in dry processing technologies. Atomic scale precision
below 10 nm is now possible with fine patterning technologies for high-volume …

Plasma plays an important role in semiconductor processes. With the recent miniaturization
and integration, the control of plasma became essential for success in the critical dimension …

Photo-atomic layer etching (photo-ALE) of GaAs and AlGaAs semiconductors was
investigated in deionized H2O and aqueous solution of NH4OH under weak excitation …