Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

H Miyajima, K Ishikawa, M Sekine… - Plasma Processes and …, 2019 - Wiley Online Library
The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

[HTML][HTML] Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

MR Baklanov, V Jousseaume, TV Rakhimova… - Applied Physics …, 2019 - pubs.aip.org
This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics

AA Rezvanov, AV Miakonkikh, DS Seregin… - Journal of Vacuum …, 2020 - pubs.aip.org
Surfactant-templated porous organosilicate glass low-k films have been deposited by using
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …

Study of CoTa alloy as barrier layer for Cu/low-k interconnects

X Wang, LT Liu, P He, XP Qu, J Zhang… - Journal of Physics D …, 2017 - iopscience.iop.org
CoTa alloy films as diffusion barriers for Cu/low-k interconnects are studied. Crystalline
structure, thermal stability, barrier and sealing properties on low-k dielectric of CoTa alloys …

[HTML][HTML] In-Situ Imaging of a Light-Induced Modification Process in Organo-Silica Films via Time-Domain Brillouin Scattering

S Sandeep, AS Vishnevskiy, S Raetz, S Naumov… - Nanomaterials, 2022 - mdpi.com
We applied time-domain Brillouin scattering (TDBS) for the characterization of porogen-
based organosilicate glass (OGS) films deposited by spin-on-glass technology and cured …

Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission

AI Zotovich, SM Zyryanov, DV Lopaev… - ACS Applied …, 2022 - ACS Publications
Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …

[HTML][HTML] Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above− 50° C

R Chanson, L Zhang, S Naumov, YA Mankelevich… - Scientific reports, 2018 - nature.com
The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is
studied in a periodic mesoporous oxide (PMO) with∼ 34% porosity and k-value∼ 2.3. At a …

[HTML][HTML] Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores

YK Sa, J Bang, J Son, DY Yu, YC Kim - Materials, 2021 - mdpi.com
This paper reported the enhancement in thermo-mechanical properties and chemical
stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of …

Metal barrier induced damage in self-assembly based organosilica low-k dielectrics and its reduction by organic template residues

M Krishtab, JF de Marneffe, S Armini… - Applied Surface …, 2019 - Elsevier
This study describes the damage caused by physical vapor deposition of TaN/Ta barriers on
porous self-assembled organosilica low-k dielectrics for IC applications. It is demonstrated …

[HTML][HTML] Analytical study of porous organosilicate glass films prepared from mixtures of 1, 3, 5-and 1, 3-alkoxysilylbenzenes

M Rasadujjaman, X Wang, Y Wang, J Zhang… - Materials, 2021 - mdpi.com
Organosilicate glass (OSG)-based porous low dielectric constant (low-k) films with different
molar ratios of 1, 3, 5-tris (triethoxysilyl) benzene to 1, 3-bis (triethoxysilyl) benzene bridging …