Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

This article presents the state-of-the-art electric vehicle (EV) charging technologies that
benefit from the wide bandgap (WBG) devices, which is regarded as the most significant …

Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

Double-sided cooling based on planar packaging method features better thermal
performance than traditional single-sided cooling based on wire bonds. However, this …

To participate in the transition towards a sustainable use of energy, the aircraft sector needs
to be transformed with respect to the energy carrier and propulsion methods. For smaller …

Due to the outstanding material properties, silicon carbide (SiC) power device is the most
promising alternative to silicon devices and can work at higher junction temperature …

To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Evaluating the robustness of power semiconductor devices is key for their adoption into
power electronics applications. Recent static acceleration tests have revealed that SiC metal …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …