[PDF][PDF] Sensitive chemical detection with distributed feedback interband cascade lasers

I Vurgaftman, P Geiser, WW Bewley… - Encyclopedia of …, 2016 - researchgate.net
The hybrid architecture of the interband cascade laser (ICL) combines the interband active
transitions of a conventional diode laser with the multiple active stages of a quantum …

Tunable single-mode slot waveguide quantum cascade lasers

B Meng, J Tao, X Hui Li, Y Quan Zeng, S Wu… - Applied Physics …, 2014 - pubs.aip.org
We report experimental demonstration of tunable, monolithic, single-mode quantum
cascade lasers (QCLs) at∼ 10 μm with a two-section etched slot structure. A single-mode …

Distributed-feedback quantum cascade laser emitting at 3.2 μm

JM Wolf, A Bismuto, M Beck, J Faist - Optics express, 2014 - opg.optica.org
In this work, we present GaInAs/AlAs/AlInAs quantum cascade lasers emitting from 3.2 to 3.4
μm. Single-mode emission is obtained using buried distributed-feedback gratings fabricated …

Quantum transport simulation of high-power 4.6-μm quantum cascade lasers

O Jonasson, S Mei, F Karimi, J Kirch, D Botez, L Mawst… - Photonics, 2016 - mdpi.com
We present a quantum transport simulation of a 4.6-μ m quantum cascade laser (QCL)
operating at high power near room temperature. The simulation is based on a rigorous …

Mid-infrared waveguides in zinc sulfide crystal

Q An, Y Ren, Y Jia, JRV de Aldana… - Optical Materials …, 2013 - opg.optica.org
Depressed cladding optical waveguides have been fabricated in a zinc sulfide (ZnS) crystal
by femtosecond laser inscription. The structures support single-or multi-mode guidance at …

[HTML][HTML] Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure

SF Haider, U Kumar, S Kattayat, S Josey, MA Ahmad… - Results in Optics, 2021 - Elsevier
A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination
of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be …

Terahertz quantum cascade lasers based on quaternary AlInGaAs barriers

K Ohtani, M Beck, G Scalari, J Faist - Applied Physics Letters, 2013 - pubs.aip.org
Terahertz quantum cascade lasers incorporating lattice-matched quaternary AlInGaAs
barriers grown by molecular beam epitaxy on InP substrate are reported. Four quantum well …

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

Y Gu, YG Zhang, YJ Ma, L Zhou, XY Chen… - Applied Physics …, 2015 - pubs.aip.org
This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers.
This record long wavelength lasing is achieved by applying InP-based Sb-free structures …

The physics of mid-infrared semiconductor materials and heterostructures

SJ Sweeney, TD Eales, IP Marko - Mid-infrared Optoelectronics, 2020 - Elsevier
This chapter reviews the fundamental physics and associated limitations of semiconductor
lasers operating across the mid-infrared (MIR) range of 2–20 μm. Using a combination of …

[HTML][HTML] Phase-matching in terahertz quantum cascade laser sources based on Cherenkov difference-frequency mixing

W Oberhausen, I Lubianskii, G Boehm, A Strömberg… - APL Photonics, 2023 - pubs.aip.org
Terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-
frequency generation in dual-wavelength mid-infrared quantum cascade lasers are currently …