Extensive efforts are being made to improve the material quality of semiconductor quantum
cascade lasers (QCLs) to suppress the carrier scattering from the interface roughness (IFR) …

We report on a tunable continuous-wave mid-infrared optical parametric oscillator (OPO),
which is locked to a fully stabilized near-infrared optical frequency comb using a frequency …

The modern commercial optoelectronic infrastructure rests on a foundation of only a few,
select semiconductor materials, capable of serving as viable substrates for devices. Any new …

Band structure properties of the type-II W-design AlSb/InAs/GaIn (As) Sb/InAs/AlSb quantum
wells have been investigated theoretically in a systematic manner and with respect to their …

In order to increase the conduction band offset of the ZnCdMgSe-based material system we
studied the incorporation of strained CdSe layers to obtain deeper quantum wells for shorter …

Electrical laser emission frequency tuning of a three terminal THz quantum cascade laser is
demonstrated. A high electron mobility transistor structure is used in a surface plasmon …

This work reports 2.7 μm InAs/In 0.6 Ga 0.4 As quantum well lasers on InP-based
metamorphic In x Al 1− x As graded buffers. X-ray diffraction measurement shows favorable …

A new sensing platform to simultaneously identify and quantify volatile C1 to C4 alkanes in
multi-component gas mixtures is presented. This setup is based on an optically pumped …

We present 3.36 µm buried heterostructure distributed-feedback quantum cascade lasers
with a power dissipation at threshold below 250 mW and operation temperatures as high as …

In this chapter, we review recent progress of using tellurite glass nonlinear optical fibers for
mid-infrared nonlinear applications. First, we introduce various fabrication approaches …