We present research on the role of multiple quantum well periods in extended short-
wavelength infrared InGaAs/InAsPSb type-I LEDs. The fabricated LEDs consisted of 6, 15 …

We have investigated metamorphic buffer layers (MBLs), as so‐called virtual substrates, for
accessing a compositional range of Inx Ga1− x As/Aly In1− y As superlattice (SL) materials …

Quantum cascade (QC) lasers with emission at wavelengths below 4 μm are difficult to
achieve from conventional III-V materials systems lattice matched to GaAs and InP due to the …

The authors report the optimization of MgSe barrier thickness in CdSe/MgSe multiple
quantum well structures and its effect on structural, optical qualities and intersubband (ISB) …

The authors report the growth of ZnO/ZnMgO multiple quantum well (MQW) structures by
plasma-assisted molecular beam epitaxy. A set of three MQW samples with different well …

We report a comprehensive study of γ-irradiation on optical, electrical, and laser
characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe …

This work reports on InAs quantum wells (QWs) grown on GaAs-based metamorphic In 0.83
Al 0.17 As buffers for type-I mid-infrared (MIR) emission. X-ray diffraction and Raman …

InAs/InGaAs quantum well laser structures have been grown on InP-based metamorphic In
0.8 Al 0.2 As buffers by gas source molecular beam epitaxy. The effects of barrier and …

We report a type-II GaSb-based interband cascade laser operating a continuous wave at
room temperature. The cascade region of interband cascade laser was designed using …

Quantum cascade lasers are electrically pumped unipolar semiconductor devices based on
intersubband transitions. The laser frequency can be designed by an appropriate …