This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

The present review article is devoted to the analysis of the problems related to the design of
gas sensors based on porous semiconductors (PS). The peculiarities of the semiconductor …

We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

This paper reviews recent efforts by authors' group to utilize electrochemical processes for
formation, processing and gate control of III–V semiconductor nanostructures. Topics include …

Large area surface microstructuring is commonly employed to suppress light reflection and
enhance light absorption in silicon photovoltaic devices, photodetectors, and image sensors …

We report about chemical, structural and optical characteristics of porous GaAs near-surface
layers formed by low energy and high fluence ion implantation of Si+ and Ge+ ions. The …

Raman scattering (RS), photoluminescence (PL), optical reflectance spectra, AFM, SEM,
XPS have been measured to study porous films of GaAs, obtained by electrochemical …

In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs
diodes as a function of temperature. The (I–V)–T characteristics are analysed on the basis of …

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs
nanopillar arrays, using the nanosphere lithography technique as a templating mechanism …