Design of a -Band 20-dBm Wideband Power Amplifier Using Transformer-Based Radial Power Combining in 90-nm CMOS
CF Chou, YH Hsiao, YC Wu, YH Lin… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
This paper presents a V-band 1.2-V wideband power amplifier (PA) with a compact four-way
radial power combiner in a 90-nm CMOS process. A transformer-based radial power …
radial power combiner in a 90-nm CMOS process. A transformer-based radial power …
A K-band power amplifier with 26-dBm output power and 34% PAE with novel inductance-based neutralization in 90-nm CMOS
WC Huang, JL Lin, YH Lin… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
A fully-integrated K-band transformer combined power amplifier (PA) with novel
neutralization technique is presented and implemented in 90-nm CMOS technology for 5G …
neutralization technique is presented and implemented in 90-nm CMOS technology for 5G …
A K-band transformer based power amplifier with 24.4-dBm output power and 28% PAE in 90-nm CMOS technology
JL Lin, YH Lin, YH Hsiao… - 2017 IEEE MTT-S …, 2017 - ieeexplore.ieee.org
A fully integrated K-band transformer based power amplifier with neutralization technique is
proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined …
proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined …
Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS
R Ciocoveanu, R Weigel, A Hagelauer… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This paper presents a 60 GHz highly efficient single stage differential stacked Class-AB
power amplifier (PA) with second harmonic control (HC) for short range applications using …
power amplifier (PA) with second harmonic control (HC) for short range applications using …
A high gain V-band power amplifier for 5G applications
X Zhu, R Zhang, C Shi - IEICE Electronics Express, 2021 - jstage.jst.go.jp
This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a
55nm CMOS technology for V-band 5G wireless communication applications. An accurate …
55nm CMOS technology for V-band 5G wireless communication applications. An accurate …
A balanced power amplifier with asymmetric coupled-line couplers and Wilkinson baluns in a 90 nm SiGe BiCMOS technology
Y Gong, JD Cressler - 2020 IEEE/MTT-S International …, 2020 - ieeexplore.ieee.org
This work presents the design of a high power, two-stage, wideband, balanced power
amplifier (PA) implemented in a 90 nm SiGe BiCMOS technology. Asymmetric coupled-line …
amplifier (PA) implemented in a 90 nm SiGe BiCMOS technology. Asymmetric coupled-line …
Review of millimeter-wave CMOS power amplifiers
H Wang, JL Lin, ZM Tsai - 2018 IEEE International Symposium …, 2018 - ieeexplore.ieee.org
This paper reviews the current status of millimeter-wave CMOS power amplifiers. The basic
power amplifier architectures will be presented, together with the power combining …
power amplifier architectures will be presented, together with the power combining …
[HTML][HTML] A 28 GHz Linear Power Amplifier Based on CPW Matching Networks with Series-Connected DC-Blocking Capacitors
Q Xia, D Li, J Huang, J Li, H Chang, B Sun, H Liu - Electronics, 2020 - mdpi.com
In this paper, the influence of the DC-blocking capacitors leveraged in coplanar waveguide
(CPW) matching networks is studied. CPW matching networks with series-connected DC …
(CPW) matching networks is studied. CPW matching networks with series-connected DC …
A 6-way ring combiner/divider
KD Holzer, JS Walling - 2017 IEEE MTT-S International …, 2017 - ieeexplore.ieee.org
A 6-way planar ring for combining/dividing signals is presented in this paper. Conventional
planar power combining/dividing structures use derivatives of the Wilkinson combiner in a …
planar power combining/dividing structures use derivatives of the Wilkinson combiner in a …