Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Semiconductor nanowires (NWs) represent a new class of materials and a shift from
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …

III–V solar cells in the nanowire geometry might hold significant synthesis-cost and device-
design advantages as compared to thin films and have shown impressive performance …

III–V semiconductor nanowire arrays show promise as a platform for next-generation solar
cells. However, the theoretical efficiency limit for converting the energy of sunlight into …

GaAs nanowire cathodes with exponential doping and graded Al composition structures are
proposed for photon-enhanced thermionic emission (PETE) devices. The conversion …

Here we demonstrate a more effective use of III–V photoconversion material to achieve an
ultrahigh power-per-weight ratio from a solar cell utilizing an axial pin junction GaAs/AlGaAs …

Nanowire photodetectors, which have the advantages of fast response and high
photoelectric conversion efficiency, can be widely applied in various industries. However …

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …