Semiconductor nanowires are a class of materials recently gaining increasing interest for solar cell applications. In this article we review the development of the field with a special …
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation technology with good functionality, superior performance, high integration ability and low …
NI Goktas, P Wilson, A Ghukasyan, D Wagner… - Applied Physics …, 2018 - pubs.aip.org
Semiconductor nanowires (NWs) represent a new class of materials and a shift from conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …
G Otnes, E Barrigón, C Sundvall, KE Svensson… - Nano …, 2018 - ACS Publications
III–V solar cells in the nanowire geometry might hold significant synthesis-cost and device- design advantages as compared to thin films and have shown impressive performance …
III–V semiconductor nanowire arrays show promise as a platform for next-generation solar cells. However, the theoretical efficiency limit for converting the energy of sunlight into …
L Liu, Y Diao, S Xia - Journal of materials science, 2019 - Springer
GaAs nanowire cathodes with exponential doping and graded Al composition structures are proposed for photon-enhanced thermionic emission (PETE) devices. The conversion …
Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial pin junction GaAs/AlGaAs …
X Chen, N Xia, Z Yang, F Gong, Z Wei, D Wang… - …, 2018 - iopscience.iop.org
Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However …
JP Boulanger, ACE Chia, B Wood… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …