The effect of gain and embedding of amplifying cells (amp-cell) on the output power of
power amplifiers (PAs) at high mm-wave frequencies is studied. This is the frequency range …

A compact, 60-GHz high-power, wideband balanced power amplifier, implemented in a 90-
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …

The stacked power amplifier is a widely adopted solution in CMOS technology to overcome
breakdown limits. Its application to compound semiconductor technology is instead rather …

This article presents a-band (ie, 47-75 GHz) differential four-way distributed-active-
transformer (DAT) power amplifier (PA), which uses hybrid NMOS/PMOS for double …

This letter presents a feasibility study for a 62-GHz power amplifier (PA) in a 22-nm CMOS
technology with integrated data modulation via the back-gate. The proposed PA consists of …

This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …

This work presents the design of a high power, two-stage, wideband, balanced power
amplifier (PA) implemented in a 90 nm SiGe BiCMOS technology. Asymmetric coupled-line …

A 28-GHz power amplifier (PA) with adaptive cross feedback (ACF) is presented. The ACF is
employed by an adaptively controllable RC-feedback circuit from the source to the opposite …

A Q-band power amplifier (PA) with broadband as well as high output power and power-
added efficiency (PAE) is presented. The circuit adopts a pseudo-differential push-pull …

The device output voltage and current waveforms are essential for optimizing the device-
level PA performance, eg, output power, efficiency, or linearity. A harmonicallytuned PA with …