Recent advances in telecommunications avalanche photodiodes

JC Campbell - Journal of Lightwave Technology, 2007 - opg.optica.org
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …

Quantum cascade laser

J Faist, F Capasso, DL Sivco, C Sirtori, AL Hutchinson… - Science, 1994 - science.org
A semiconductor injection laser that differs in a fundamental way from diode lasers has been
demonstrated. It is built out of quantum semiconductor structures that were grown by …

Quantum key distribution and 1 Gbps data encryption over a single fibre

P Eraerds, N Walenta, M Legré, N Gisin… - New Journal of …, 2010 - iopscience.iop.org
We perform quantum key distribution (QKD) over a single fibre in the presence of four
classical channels in a C-band dense wavelength division multiplexing (DWDM) …

Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications

F Capasso, K Mohammed, A Cho - IEEE Journal of Quantum …, 1986 - ieeexplore.ieee.org
New results on the physics of tunneling in quantum well heterostructures and its device
applications are discussed. Following a general review of the field in the Introduction, in the …

Compositionally graded semiconductors and their device applications

F Capasso - Electronic Structure of Semiconductor Heterojunctions, 1988 - Springer
This paper reviews the electronic transport properties of compositionally graded materials.
Band gap grading is a powerful tool for engineering the energy band diagram of a device …

Physics of avalanche photodiodes

F Capasso - Semiconductors and semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses the avalanche photodiodes (APDs) and
important developments in these systems. The microscopic foundations of the physics of …

Epitaxial halide perovskite lateral double heterostructure

Y Wang, Z Chen, F Deschler, X Sun, TM Lu, EA Wertz… - ACS …, 2017 - ACS Publications
Epitaxial III–V semiconductor heterostructures are key components in modern
microelectronics, electro-optics, and optoelectronics. With superior semiconducting …

Multigigabit-per-second avalanche photodiode lightwave receivers

B Kasper, J Campbell - Journal of lightwave technology, 1987 - ieeexplore.ieee.org
High-speed avalanche photodiodes and high-sensitivity receivers are vital components for
future multigigabit-per-second lightwave transmission systems. We review theoretical and …

Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery

LE Tarof, DG Knight, KE Fox, CJ Miner, N Puetz… - Applied physics …, 1990 - pubs.aip.org
A novel planar separate absorption, charge sheet, grading and multiplication avalanche
photodiode (APD) structure incorporating a partial charge sheet in the device periphery is …

Semiconductor heterojunction topics: Introduction and overview

AG Milnes - Solid-State Electronics, 1986 - Elsevier
Semiconductor heterojunctions with ideal lattice matching, well-controlled in fabrication,
yield devices that cannot be achieved in any other way. These devices include modulated …