A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Recent progress in photonic processing of metal‐oxide transistors
Over the past few decades, significant progress has been made in the field of photonic
processing of electronic materials using a variety of light sources. Several of these …
processing of electronic materials using a variety of light sources. Several of these …
The mobility enhancement of indium gallium zinc oxide transistors via low-temperature crystallization using a tantalum catalytic layer
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved
through low-temperature crystallization enabled via a reaction with a transition metal …
through low-temperature crystallization enabled via a reaction with a transition metal …
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs
This letter reports the fabrication of high performance polycrystalline InGaSnO (IGTO) thin-
film transistors (TFTs) at a low temperature of 400° C. The microstructure of IGTO films was …
film transistors (TFTs) at a low temperature of 400° C. The microstructure of IGTO films was …
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors
Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active
components of thin‐film transistors (TFTs) because of their high electron mobility, cost …
components of thin‐film transistors (TFTs) because of their high electron mobility, cost …
High-Performance Thin-Film Transistors With Sputtered IGZO/Ga₂O₃ Heterojunction
X Ji, Y Yuan, X Yin, S Yan, Q Xin… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide
(IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and …
(IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and …
Vertically graded oxygen deficiency for improving electrical characteristics and stability of indium gallium zinc oxide thin-film transistors
We investigated a facile fabrication method, which is an insertion of a carrier-induced
interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve …
interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve …
Research progress on flexible oxide-based thin film transistors
L Zhang, W Xiao, W Wu, B Liu - Applied Sciences, 2019 - mdpi.com
Oxide semiconductors have drawn much attention in recent years due to their outstanding
electrical performance, such as relatively high carrier mobility, good uniformity, low process …
electrical performance, such as relatively high carrier mobility, good uniformity, low process …
Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In–Ga–Zn–O and CH3NH3PbI3 Films
To broaden the availability and application of metal–oxide (M–O)-based optoelectronic
devices, we suggest heterogeneous phototransistors composed of In–Ga–Zn–O (IGZO) and …
devices, we suggest heterogeneous phototransistors composed of In–Ga–Zn–O (IGZO) and …
High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …
publication of more than 1,300 related papers. Although the number of researches on oxide …