Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Common source amplifier and ring oscillator circuit performance optimization using multi-bridge channel FETs
VB Sreenivasulu, NA Kumari, V Lokesh… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …
performed. To enhance power performance co-optimization geometry parameters like NS …
An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective
This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …
Optimizing u-shape FinFETs for sub-5nm technology: performance analysis and device-to-circuit evaluation in digital and analog/radio frequency applications
FinFET is considered as the potential contender in the era of Multigate FETs. This
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
Design and performance optimization of junctionless bottom spacer FinFET for digital/analog/RF applications at sub-5nm technology node
Design and Performance Optimization of Junctionless Bottom Spacer FinFET for Digital/Analog/RF
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
A Proposal for Optimization of Spacer Engineering at Sub-5-nm Technology Node for JL-TreeFET: A Device to Circuit Level Implementation
R Andavarapu, S Bagati, S Valasa… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This article for the first time explores the effect of different spacer materials on junctionless
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐A Design Perspective
G Bansal, A Tiwari, B Majumdar… - Advanced Theory …, 2024 - Wiley Online Library
In this work, for the first time, the catalytic metal gate (CMG) based nanosheet Field Effect
Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for …
Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for …
Design considerations into circuit applications for structurally optimised FinFET
K Sarangam, S Valasa, PK Mudidhe… - ECS Journal of Solid …, 2023 - iopscience.iop.org
FinFETs have gained a lot of demand in the family of multigate FET devices in the recent
years. In this view, this manuscript aims to design different FinFET architectures to observe …
years. In this view, this manuscript aims to design different FinFET architectures to observe …
Pushing the Boundaries: Design and Simulation Approach of Negative Capacitance Nanosheet FETs with Ferroelectric and Dielectric Spacers at the Sub-3 nm …
This manuscript for the first time introduces an approach of incorporating ferroelectric (FE)
spacers in the negative capacitance (NC) nanosheet (NS) field-effect transistor (FET) …
spacers in the negative capacitance (NC) nanosheet (NS) field-effect transistor (FET) …