GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
S Adachi - Journal of applied physics, 1985 - pubs.aip.org
The Al x Ga1− x As/GaAs heterostructure system is potentially useful material for high‐speed
digital, high‐frequency microwave, and electro‐optic device applications. Even though the …
digital, high‐frequency microwave, and electro‐optic device applications. Even though the …
Dislocations in strained-layer epitaxy: theory, experiment, and applications
EA Fitzgerald - Materials science reports, 1991 - Elsevier
In this review paper, we first present an historical perspective of theoretical work and some
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
An optical modulator integrated on silicon is a key enabler for high-performance optical
interconnects,,,,,. However, Si-based optical modulators suffer from low phase-modulation …
interconnects,,,,,. However, Si-based optical modulators suffer from low phase-modulation …
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
BR Bennett, RA Soref… - IEEE Journal of Quantum …, 1990 - ieeexplore.ieee.org
The change in refractive index Delta n produced by injection of free carriers in InP, GaAs,
and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap …
and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap …
[图书][B] GaAs and related materials: bulk semiconducting and superlattice properties
S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
Empirical low-field mobility model for III–V compounds applicable in device simulation codes
M Sotoodeh, AH Khalid, AA Rezazadeh - Journal of applied physics, 2000 - pubs.aip.org
A Caughey–Thomas-like mobility model with temperature and composition dependent
coefficients is used in this work to describe the dependence of electron and hole mobilities …
coefficients is used in this work to describe the dependence of electron and hole mobilities …
[图书][B] Semiconductor-laser fundamentals: physics of the gain materials
WW Chow, SW Koch - 2013 - books.google.com
Since Fall of 1993, when we completed the manuscript of our book" Semi conductor-Laser
Physics"[WW Chow, SW Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many …
Physics"[WW Chow, SW Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many …
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
S Adachi - Journal of applied physics, 1987 - pubs.aip.org
The methods for calculation of material parameters in compound alloys are discussed, and
the res~ lts for AlxGal __, AsySbl_y, GaxIn] _xAsySbl_y, and InP" AsySb1 _ xy quaternaries …
the res~ lts for AlxGal __, AsySbl_y, GaxIn] _xAsySbl_y, and InP" AsySb1 _ xy quaternaries …
Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
C Pryor - Physical Review B, 1998 - APS
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …