Low‐temperature optical transmission spectra of several In x Ga1− x As/GaAs strained
multiple quantum wells (MQWs) with different well widths and In mole fractions have been …

A comparative survey of known experimental and theoretical values of heavy-hole and
electron effective mass in GaAs, InAs, and A1As is presented in this work. Recommended …

Quantum well solar cells, as a promising approach for next-generation photovoltaic
technology, have received great attention in the last few years. Recent developments in …

Simulation of gallium arsenide-based Cu/TiO 2/GaAs/CdTe/Pt quantum dot solar cell using
Solar Cell Capacitance Simulator-1D (SCAPS-1D) version 3.3. 09 has been presented in …

A density-functional theory study of structural and electronic properties of III-arsenide
compounds BAs, AlAs, GaAs and InAs, is presented. For the exchange-correlation potential …

This practical book shows how an understanding of structure, thermodynamics, and
electrical properties can explain some of the choices of materials used in microelectronics …

A comprehensive design method for long wavelength strained quantum-well lasers is
applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-/spl mu/m lasers for …

The quaternary alloys InGaAsP, matched in their lattice constant to InP, are considered in
view of optical-waveguide applications. The parameters, most important in this connexion …

Strained single quantum wells composed of GaAs/InGaAs/GaAs were grown by molecular
beam epitaxy and characterized at room temperature by photoreflectance and at 6 and 77 K …

We have measured the photoreflectance (PR) spectra at 300 and 77 K of two strained-layer
[001] In x Ga 1− x As/GaAs (x≊ 0.12) multiple quantum wells (MQW's) with nominal well (LZ) …