M Darnon, N Casiez, T Chevolleau, G Dubois… - Journal of Vacuum …, 2013 - pubs.aip.org
The fabrication of interconnects in integrated circuits requires the use of porous low dielectric constant materials that are unfortunately very sensitive to plasma processes. In this …
L Foan, J El Sabahy, F Ricoul, B Bourlon… - Sensors and Actuators B …, 2018 - Elsevier
This work reports on the improved performance using nanoporous organosilicate (SiOCH) for lab‐on-a-chip extraction of organic pollutants from natural waters. Validations were …
M Redzheb, L Prager, S Naumov, M Krishtab… - Applied Physics …, 2016 - pubs.aip.org
The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH 3 (methyl) bonds, the Si-CH 2 …
Nous présentons dans ce travail l'impact du procédé de fabrication d'un circuit intégré (nœud technologique 28 nm) sur le matériau diélectrique poreux utilisé pour isoler les …
M Darnon, T Chevolleau, C Licitra, N Rochat… - Journal of Vacuum …, 2013 - pubs.aip.org
The integration of porous dielectric (low-k) in interconnects of integrated circuits is limited by the damage induced by plasma processes to the porous material. Plasma-damaged …
Submilisecond laser anneal has been experimentally investigated for porogen removal and its ability to improve the mechanical strength in oxycarbosilane ultra low-k films …
J McKinley - Springer Handbook of Glass, 2019 - Springer
Scientists and engineers have available to them powerful qualitative and quantitative analytical techniques for the analysis of materials. Specifically, ion and electron beam …
2.2. SCOPE This chapter explores the most prominent first level interconnects common in today's industry namely: wire-bonding, tape automated bonding and flip-chip bonding …
R Dussart, T Tillocher, F Leroy, P Lefaucheux… - researchgate.net
Ultra-low-k (ULK) dielectrics are a class of insulating materials that act to minimize capacitance in microelectronic circuits. ULKs are distinguished from ordinary low-k …